PubMed Health⌕ Search

Biomedical subjects

Qianfan Xu

Publications and source records attributed to Qianfan Xu.

10 recordsLinked to original sources
PubMed2006

Transmission of high-data-rate optical signals through a micrometer-scale silicon ring resonator.

The effects of a micrometer-scale silicon ring resonator with a FWHM of 0.078 nm (9.6 GHz) on a nonreturn to zero amplitude-modulated optical signal with a modulation rate of 10 Gbps are experimentally investigated. By transmitting the optical signal through the device, significant spectral distortion and side band attenuation is introduced, as characterized by amplitude Bode plots, and a power penalty of 0.8 dB is observed. Carrier wavelengths within the transmission resonance, but detuned from the center wavelength, are investigated as well. Numerical simulations further support the experimental results.

Journal Article↗
PubMed2006

Experimental realization of an on-chip all-optical analogue to electromagnetically induced transparency.

We provide the first experimental observation of structure tuning of the electromagnetically induced transparency-like spectrum in integrated on-chip optical resonator systems. The system consists of coupled silicon ring resonators with 10 microm diameter on silicon, where the coherent interference between the two coupled resonators is tuned. We measured a transparency-resonance mode with a quality factor of 11,800.

Journal Article↗
PubMed2006

Carrier-induced optical bistability in silicon ring resonators.

We demonstrate optical bistability in a micrometer-sized silicon ring resonator based on the free-carrier dispersion effect in silicon. We measure the transfer function of the resonator showing a hysteresis loop with an input optical power of less than 10 mW. The influence of the thermal optical effect, which is minimized in the experiment by use of nanosecond pulses, is evaluated theoretically. Applications include sequential logic operations for all-optical routing.

Journal Article↗
PubMed2005

Ultrafast all-optical modulation on a silicon chip.

We experimentally demonstrate ultrafast all-optical modulation using a micrometer-sized silicon photonic integrated device. The device transmission is strongly modulated by photoexcited carriers generated by low-energy pump pulses. A p-i-n junction is integrated on the structure to permit control of the generated carrier lifetimes. When the junction is reverse biased, carriers are extracted from the device in a time as short as 50 ps, permitting greater than 5 Gbit/s modulation of optical signals on a silicon chip.

Journal Article↗
PubMed2005

Micrometer-scale all-optical wavelength converter on silicon.

We demonstrate a highly integrated micrometer-scale low-power wavelength converter based on the free-carrier dispersion effect in silicon. The conversion is achieved through all-optical modulation of a silicon ring resonator by use of modulated cw control light. The ring resonator has a radius of 5 microm and a Q of approximately 10,000. Both inverted and noninverted modulation are achieved at a bit rate of 0.9 Gbits/s with a control power of 4.5 mW. The scaling of the required control power for operation with respect to the characteristics of the ring resonator is established.

Journal Article↗
PubMed2005

Ultrafast integrated semiconductor optical modulator based on the plasma-dispersion effect.

We demonstrate integrated semiconductor optical devices with ultrafast temporal responses based on the plasma-dispersion effect. The geometry of the devices removes the dependence of the modulation time on the free-carrier dynamics. We present the theoretical analysis of the performance of such devices. We show that a silicon-based device with a free-carrier lifetime of 1.4 ns can be modulated on a time scale of only 20 ps. The ultrafast operation is verified experimentally.

Journal Article↗
PubMed2005

Micrometre-scale silicon electro-optic modulator.

Metal interconnections are expected to become the limiting factor for the performance of electronic systems as transistors continue to shrink in size. Replacing them by optical interconnections, at different levels ranging from rack-to-rack down to chip-to-chip and intra-chip interconnections, could provide the low power dissipation, low latencies and high bandwidths that are needed. The implementation of optical interconnections relies on the development of micro-optical devices that are integrated with the microelectronics on chips. Recent demonstrations of silicon low-loss waveguides, light emitters, amplifiers and lasers approach this goal, but a small silicon electro-optic modulator with a size small enough for chip-scale integration has not yet been demonstrated. Here we experimentally demonstrate a high-speed electro-optical modulator in compact silicon structures. The modulator is based on a resonant light-confining structure that enhances the sensitivity of light to small changes in refractive index of the silicon and also enables high-speed operation. The modulator is 12 micrometres in diameter, three orders of magnitude smaller than previously demonstrated. Electro-optic modulators are one of the most critical components in optoelectronic integration, and decreasing their size may enable novel chip architectures.

Journal Article↗
PubMed2004

Experimental demonstration of guiding and confining light in nanometer-size low-refractive-index material.

We experimentally demonstrate a novel silicon waveguide structure for guiding and confining light in nanometer-wide low-refractive-index material. The optical field in the low-index material is enhanced because of the discontinuity of the electric field at high-index-contrast interfaces. We measure a 30% reduction of the effective index of light propagating in the novel structure due to the presence of the nanometer-wide low-index region, evidencing the guiding and confinement of light in the low-index material. We fabricate ring resonators based on the structure and show that the structure can be implemented in highly integrated photonics.

Journal Article↗
PubMed2004

Guiding and confining light in void nanostructure.

We present a novel waveguide geometry for enhancing and confining light in a nanometer-wide low-index material. Light enhancement and confinement is caused by large discontinuity of the electric field at high-index-contrast interfaces. We show that by use of such a structure the field can be confined in a 50-nm-wide low-index region with a normalized intensity of 20 microm(-2). This intensity is approximately 20 times higher than what can be achieved in SiO2 with conventional rectangular waveguides.

Journal Article↗