Biomedical subjects
Publications and source records attributed to R J Haug.
Single electron tunneling is studied in a many electron quantum dot in high magnetic fields. For such a system multiple transitions of the spin configuration are theoretically predicted. With a combination of spin blockade and Kondo effect we are able to detect five regions with different spin configurations. Transitions are induced with changing electron numbers.
We have investigated the noise properties of the tunneling current through vertically coupled self-assembled InAs quantum dots. We observe super-Poissonian shot noise at low temperatures. For increased temperature this effect is suppressed. The super-Poissonian noise is explained by capacitive coupling between different stacks of quantum dots.
Shallow acceptor levels in Si/Ge/Si quantum well heterostructures are characterized by resonant-tunneling spectroscopy in the presence of high magnetic fields. In a perpendicular magnetic field we observe a linear Zeeman splitting of the acceptor levels. In an in-plane field, on the other hand, the Zeeman splitting is strongly suppressed. This anisotropic Zeeman splitting is shown to be a consequence of the huge light-hole--heavy-hole splitting caused by a large biaxial strain and a strong quantum confinement in the Ge quantum well.
We investigate the Kondo effect and spin blockade observed in a many-electron quantum dot and study the magnetic field dependence. At lower fields, a pronounced Kondo effect is found, which is replaced by the spin blockade at higher fields. In an intermediate regime, both effects are visible. We make use of this combined effect to gain information about the internal spin configuration of our quantum dot. We find that the data cannot be explained assuming regular filling of electronic orbitals. Instead, spin polarized filling seems to be probable.
We observe the noise spectrum of electron spins in bulk GaAs by Faraday-rotation noise spectroscopy. The experimental technique enables the undisturbed measurement of the electron-spin dynamics in semiconductors. We measure exemplarily the electron-spin relaxation time and the electron Landé g factor in -doped GaAs at low temperatures and find good agreement of the measured noise spectrum with a theory based on Poisson distribution probability.
In lateral quantum dots, the combined effect of both Dresselhaus and Bychkov-Rashba spin-orbit coupling is equivalent to an effective magnetic field +/- B(SO) which has the opposite sign for s(z)= +/- 1/2 spin electrons. When the external magnetic field is perpendicular to the planar structure, the field B(SO) generates an additional splitting for electron states as compared to the spin splitting in the in-plane field orientation. The anisotropy of spin splitting has been measured and then analyzed in terms of spin-orbit coupling in several AlGaAs/GaAs quantum dots by means of resonant tunneling spectroscopy. From the measured values and sign of the anisotropy we are able to determine the dominating spin-orbit coupling mechanism.
We study the propagation of edge magnetoplasmons by time-resolved current measurements in a sample which allows for selective detection of edge states in the quantum Hall regime. At filling factors close to nu=3 we observe two decoupled modes of edge excitations, one of which is related to the innermost compressible strip and is identified as an interedge magnetoplasmon mode. From the analysis of the propagation velocities of each mode the internal spatial parameters of the edge structure are derived.
Phonon excitations of fractional quantum Hall states at filling factors nu = 1/3, 2/5, 4/7, 3/5, 4/3, and 5/3 are experimentally shown to be based on Landau-level transitions of composite fermions. At filling factor nu = 2/3, however, a linear field dependence of the excitation energy in the high-field regime rather hints towards a spin transition excited by the phonons. We propose to explain this surprising observation by an only partially polarized 2/3 ground state, making the energetically lower lying spin transition also allowed for phonon excitations.
The activation gap Delta of the fractional quantum Hall states at constant fillings nu=2/3 and 2/5 has been measured as a function of the perpendicular magnetic field B. A linear dependence of Delta on B is observed while approaching the spin-polarization transition. This feature allows a direct measurement of the g factor of composite fermions which appears to be heavily renormalized by interactions and strongly sensitive to the electronic filling factor.
A small quantum ring with less than ten electrons was studied by transport spectroscopy. For strong coupling to the leads a Kondo effect is observed and used to characterize the spin structure of the system in a wide range of magnetic fields. At small magnetic fields Aharonov-Bohm oscillations influenced by Coulomb interaction appear. They exhibit phase jumps by pi at the Coulomb-blockade resonances. Inside Coulomb-blockade valleys the Aharonov-Bohm oscillations can also be studied due to the finite conductance caused by the Kondo effect. Astonishingly, the maxima of the oscillations show linear shifts with increasing magnetic field and gate voltage.
Using different experimental techniques, we examine the dynamical scaling of the quantum Hall plateau transition in a frequency range f=0.1-55 GHz. We present a scheme that allows for a simultaneous scaling analysis of these experiments and all other data in literature. We observe a universal scaling function with an exponent kappa=0.5+/-0.1, yielding a dynamical exponent z=0.9+/-0.2.
We have measured the temperature dependence of the conductivity sigma(xx) of a two-dimensional electron system deep into the localized regime of the quantum Hall plateau transition. Using variable-range hopping theory we extract directly the localization length xi from this experiment. We use our results to study the scaling behavior of xi as a function of the filling factor distance /deltanu/ to the critical point of the transition. We find for all samples a power-law behavior xi equivalent to /deltanu/(-gamma) in agreement with the theoretically proposed universal exponent gamma = 2.35.
We have measured the complex conductivity sigma(xx) of a two-dimensional electron system in the quantum Hall regime up to frequencies of 6 GHz at electron temperatures below 100 mK. Using both its imaginary and real part we show that sigma(xx) can be scaled to a single function for different frequencies and several transitions between plateaus in the quantum Hall effect. Additionally, the conductivity in the variable-range hopping regime is used for a direct evaluation of the localization length xi. Even for large filling factor distances deltanu from the critical point we find xi approximately equals deltanu(-gamma) with a scaling exponent gamma = 2.3.
We observe pronounced transport anisotropies in magnetotransport experiments performed in the two-dimensional electron system of a Si/SiGe heterostructure. They occur when an in-plane field is used to tune two Landau levels with opposite spin to energetic coincidence. The observed anisotropies disappear drastically for temperatures above 1 K. We propose that our experimental findings may be caused by the formation of a unidirectional stripe phase oriented perpendicular to the in-plane field.
A spectroscopic method is applied to measure the inelastic quasiparticle relaxation rate in a disordered Fermi liquid. The quasiparticle relaxation rate gamma is deduced from the magnitude of fluctuations in the local density of states, which are probed using resonant tunneling through a localized impurity state. We study its dependence on the excitation energy E measured from the Fermi level. In a disordered metal (heavily doped GaAs) we find that gamma~E3/2 within the experimentally accessible energy interval, in agreement with the Altshuler-Aronov theory for electron-electron interactions in diffusive conductors.
Explore the source record for details and available documents.