R M Gwilliam | PubMed Health

PubMed2003

Quasi-phase-matched second-harmonic generation in a GaAs/AlAs superlattice waveguide by ion-implantation-induced intermixing.

We report type I second-harmonic generation by use of first-order quasi-phase matching in a GaAs/AlAs symmetric superlattice structure with femtosecond fundamental pulses at 1.55 microm. Periodic spatial modulation of the bulklike second-order susceptibility chi(zxy)(2) was achieved with quantum-well intermixing for which the group III vacancies were created by As+-ion implantation. A narrow second-harmonic bandwidth of approximately 0.9 nm (FWHM) with an average power of approximately 1.5 microW was detected, corresponding to an internal conversion efficiency of approximately 0.06%, which was considerably limited by the spectral bandwidth of the fundamental.

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PubMed2003

Wavelength conversion of 1.53-microm-wavelength picosecond pulses in an ion-implanted multiple-quantum-well all-optical switch.

An ultrafast high-contrast all-optical switch produced from a metal-organic vapor phase epitaxy-grown wafer incorporating a 50-period InGaAsP/InGaAsP multiple-quantum-well (MQW) saturable absorber (SA) and a distributed Bragg reflector is described. Postgrowth implantation with 4-MeV nitrogen ions reduces the MQW free-carrier lifetime, and hence the switch recovery time, to 5.2 ps. Incorporation of the MQW SA in an optical cavity results in switching contrast ratios greater than 10 dB. The all-optical switch is used to perform wavelength conversion of 2-ps pulses.

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PubMed2001

An efficient room-temperature silicon-based light-emitting diode.

There is an urgent requirement for an optical emitter that is compatible with standard, silicon-based ultra-large-scale integration (ULSI) technology. Bulk silicon has an indirect energy bandgap and is therefore highly inefficient as a light source, necessitating the use of other materials for the optical emitters. However, the introduction of these materials is usually incompatible with the strict processing requirements of existing ULSI technologies. Moreover, as the length scale of the devices decreases, electrons will spend increasingly more of their time in the connections between components; this interconnectivity problem could restrict further increases in computer chip processing power and speed in as little as five years. Many efforts have therefore been directed, with varying degrees of success, to engineering silicon-based materials that are efficient light emitters. Here, we describe the fabrication, using standard silicon processing techniques, of a silicon light-emitting diode (LED) that operates efficiently at room temperature. Boron is implanted into silicon both as a dopant to form a p-n junction, as well as a means of introducing dislocation loops. The dislocation loops introduce a local strain field, which modifies the band structure and provides spatial confinement of the charge carriers. It is this spatial confinement which allows room-temperature electroluminescence at the band-edge. This device strategy is highly compatible with ULSI technology, as boron ion implantation is already used as a standard method for the fabrication of silicon devices.

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