Biomedical subjects

R M Tromp

Publications and source records attributed to R M Tromp.

10 recordsLinked to original sources

PubMed2006

The influence of the surface migration of gold on the growth of silicon nanowires.

Interest in nanowires continues to grow, fuelled in part by applications in nanotechnology. The ability to engineer nanowire properties makes them especially promising in nanoelectronics. Most silicon nanowires are grown using the vapour-liquid-solid (VLS) mechanism, in which the nanowire grows from a gold/silicon catalyst droplet during silicon chemical vapour deposition. Despite over 40 years of study, many aspects of VLS growth are not well understood. For example, in the conventional picture the catalyst droplet does not change during growth, and the nanowire sidewalls consist of clean silicon facets. Here we demonstrate that these assumptions are false for silicon nanowires grown on Si(111) under conditions where all of the experimental parameters (surface structure, gas cleanliness, and background contaminants) are carefully controlled. We show that gold diffusion during growth determines the length, shape, and sidewall properties of the nanowires. Gold from the catalyst droplets wets the nanowire sidewalls, eventually consuming the droplets and terminating VLS growth. Gold diffusion from the smaller droplets to the larger ones (Ostwald ripening) leads to nanowire diameters that change during growth. These results show that the silicon nanowire growth is fundamentally limited by gold diffusion: smooth, arbitrarily long nanowires cannot be grown without eliminating gold migration.

Journal Article↗

PubMed2005

Role of surface electronic structure in thin film molecular ordering.

We show that the orientation of pentacene molecules is controlled by the electronic structure of the surface on which they are deposited. We suggest that the near-Fermi level density of states above the surface controls the interaction of the substrate with the pentacene pi orbitals. A reduction of this density as compared to noble metals, realized in semimetallic Bi(001) and Si(111)(5 x 2)Au surfaces, results in pentacene standing up. Interestingly, pentacene grown on Bi(001) is highly ordered, yielding the first vertically oriented epitaxial pentacene thin films observed to date.

Journal Article↗

PubMed2004

Critical role of surface steps in the alloying of Ge on Si(001).

Using low-energy electron microscopy, we show that intermixing of Ge on Si(001) during growth is enhanced on stepped surfaces and is hindered on terraces where step flow does not occur. On large terraces we have identified a dramatic and unanticipated structural rearrangement that facilitates intermixing: Pairs of steps spontaneously form and migrate over the surface, leaving alloyed regions in their wake. The driving force for step formation is the entropy gain associated with the enhanced intermixing of Ge.

Journal Article↗

PubMed2004

Shape and stability of self-assembled surface domains.

The shapes of two-dimensional (2D) nanostructures on surfaces are determined by their boundary energies as well as by long-range elastic, electrostatic or magnetic interactions. Although it is well known that long-range interactions can give rise to shape bifurcation-an abrupt change in shape symmetry at a critical size-a general description of the evolution of shape with size, systematically incorporating both the azimuthal dependence of the boundary energy and long-range interactions, has been lacking. Here we show that unconstrained shape relaxation, including previously ignored boundary curvature, leads to a novel, continuous shape change from convex at small size to concave at large size. In addition to demonstrating a method to quantitatively determine the azimuthal dependence of the boundary energy, we show that the energy gain associated with boundary curvature relaxation is a key factor in stabilizing surface nanostructures. For 7 x 7 domains on Si(111), boundary curvature reduces the formation free-energy by up to 50%.

Materials Testing↗

PubMed2003

Dynamic microscopy of nanoscale cluster growth at the solid-liquid interface.

Dynamic processes at the solid-liquid interface are of key importance across broad areas of science and technology. Electrochemical deposition of copper, for example, is used for metallization in integrated circuits, and a detailed understanding of nucleation, growth and coalescence is essential in optimizing the final microstructure. Our understanding of processes at the solid-vapour interface has advanced tremendously over the past decade due to the routine availability of real-time, high-resolution imaging techniques yielding data that can be compared quantitatively with theory. However, the difficulty of studying the solid-liquid interface leaves our understanding of processes there less complete. Here we analyse dynamic observations--recorded in situ using a novel transmission electron microscopy technique--of the nucleation and growth of nanoscale copper clusters during electrodeposition. We follow in real time the evolution of individual clusters, and compare their development with simulations incorporating the basic physics of electrodeposition during the early stages of growth. The experimental technique developed here is applicable to a broad range of dynamic phenomena at the solid-liquid interface.

Adsorption↗

PubMed2002

Influence of supersaturation on surface structure.

Using low-energy electron microscopy, we have investigated the influence of an external flux on the structure of the Si(111) surface during growth and etching at elevated temperatures. We find that varying the adatom supersaturation effectively changes the surface free energies of coexisting 7 x 7 and '1 x 1' regions of the surface. In response, the boundaries separating the phases adopt a new steady-state configuration. The measured configuration can be used to quantitatively determine the difference in free energy between the phases, Deltagamma. The change in Deltagamma provides a measure of the local supersaturation at the surface, and can be interpreted as a change in the phase-transition temperature.

Journal Article↗

PubMed2002

Surface stress and thermodynamic nanoscale size selection.

Using the Si(111) surface as an example, we show how temperature can be used to tune the size of domains during a surface phase transition. From analysis of the measured stable domain sizes, we determine key material parameters and clarify the close relationship between nucleation and thermodynamic size selection. More generally, the model we developed describes nanoscale self-assembly processes in contact with a reservoir (for example, liquid- or vapor-phase epitaxy).

Journal Article↗

PubMed2001

Growth dynamics of pentacene thin films.

The recent demonstration of single-crystal organic optoelectronic devices has received widespread attention. But practical applications of such devices require the use of inexpensive organic films deposited on a wide variety of substrates. Unfortunately, the physical properties of these organic thin films do not compare favourably to those of single-crystal materials. Moreover, the basic physical principles governing organic thin-film growth and crystallization are not well understood. Here we report an in situ study of the evolution of pentacene thin films, utilizing the real-time imaging capabilities of photoelectron emission microscopy. By a combination of careful substrate preparation and surface energy control, we succeed in growing thin films with single-crystal grain sizes approaching 0.1 millimetre (a factor of 20-100 larger than previously achieved), which are large enough to fully contain a complete device. We find that organic thin-film growth closely mimics epitaxial growth of inorganic materials, and we expect that strategies and concepts developed for these inorganic systems will provide guidance for the further development and optimization of molecular thin-film devices.

Journal Article↗

PubMed2001

Phase coexistence during surface phase transitions.

In contrast to standard thermodynamic models, we observe phase coexistence over an extended temperature range at a first-order surface phase transition. We have measured the domain evolution of the Si(111)-( 7x7) to ( 1x1) phase transition with temperature, using low-energy electron microscopy. Comparison with detailed, quantitative theoretical predictions shows that coexistence is due to long-range elastic and electrostatic domain interactions. Phase coexistence is predicted to be a universal feature of surface phase transitions.

Journal Article↗

PubMed1998

In situ transmission electron microscopy observations of the formation of self-assembled Ge islands on Si.

The in situ transmission electron microscope allows us to visualise processes occurring at surfaces and interfaces in real time and is therefore capable of providing detailed, quantitative information about reaction mechanisms. We have used a UHV TEM equipped with in situ growth capabilities to study the process of chemical vapour deposition of Ge on Si(100), with particular emphasis on the formation of self-assembled, nanosize Ge islands. Video-rate image acquisition enables us to track the development of individual islands from nucleation onwards and to observe the introduction of dislocations as the strained islands relax. For islands less than 80 nm in diameter, which are coherently strained, we observe an interesting coarsening process during growth. This coarsening results in a bimodal distribution of island sizes at certain times and a narrow size distribution at later times. We explain the phenomenon by a model in which coarsening occurs among a population of islands for which the equilibrium island shape depends on the size. Numerical simulations of coarsening in the presence of a shape transition are in good agreement with experiment. As the islands grow larger, dislocations form and we observe rapid shape changes associated with dislocation introduction. These changes can also be understood by considering a strain-dependent island shape. The insight that these results provide into the understanding of island growth and evolution can be used to develop arrays of uniformly sized islands ("quantum dots") for a variety of potential applications.

Crystallization↗