Enhanced epitaxial growth on substrates modified by ion sputtering: Ge on GaAs(110).
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Biomedical subjects
RJ Pechman
Publications and source records attributed to RJ Pechman.
Interactions of Br with Si(111)-7 x 7: Chemisorption, step retreat, and terrace etching.
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Vacancy kinetics and sputtering of GaAs(110).
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Chemisorption and thermally activated etching of Si(100)-2 x 1 by iodine.
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Temperature-dependent surface morphologies for Br-etched Si(100)-2 x 1.
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