Electron transport at metal-semiconductor interfaces: General theory.
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Biomedical subjects
RT Tung
Publications and source records attributed to RT Tung.
Co on Si(111): Silicide formation.
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Schottky-barrier inhomogeneity at epitaxial NiSi2 interfaces on Si(100).
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Comment on "Evidence of eightfold coordination for Co atoms at the CoSi2/Si(111) interface"
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Topography of the Si(111) surface during silicon molecular-beam epitaxy.
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X-ray interference method for studying interface structures.
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Surface structure of thin epitaxial CoSi2 grown on Si(111).
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Origin of A- or B-type NiSii2 determined by in in situ transmission electron microscopy and diffraction during growth.
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Origin of the excess capacitance at intimate Schottky contacts.
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Ordering at Si(111)/a-Si and Si(111)/SiO2 interfaces.
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States at epitaxial NiSi2/Si heterojunctions studied by deep-level transient spectroscopy and hydrogenation.
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Schottky-barrier heights of single-crystal NiSi2 on Si(111): The effect of a surface p-n junction.
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Preservation of a 7 x 7 periodicity at a buried amorphous Si/Si(111) interface.
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Specular boundary scattering and electrical transport in single-crystal thin films of CoSi2.
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