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Ricky J Tseng

Publications and source records attributed to Ricky J Tseng.

2 recordsLinked to original sources

Patterning organic single-crystal transistor arrays.

Field-effect transistors made of organic single crystals are ideal for studying the charge transport characteristics of organic semiconductor materials. Their outstanding device performance, relative to that of transistors made of organic thin films, makes them also attractive candidates for electronic applications such as active matrix displays and sensor arrays. These applications require minimal cross-talk between neighbouring devices. In the case of thin film systems, simple patterning of the active semiconductor layer minimizes cross-talk. But when using organic single crystals, the only approach currently available for creating arrays of separate devices is manual selection and placing of individual crystals-a process prohibitive for producing devices at high density and with reasonable throughput. In contrast, inorganic crystals have been grown in extended arrays, and efficient and large-area fabrication of silicon crystalline islands with high mobilities for electronic applications has been reported. Here we describe a method for effectively fabricating large arrays of single crystals of a wide range of organic semiconductor materials directly onto transistor source-drain electrodes. We find that film domains of octadecyltriethoxysilane microcontact-printed onto either clean Si/SiO(2) surfaces or flexible plastic provide control over the nucleation of vapour-grown organic single crystals. This allows us to fabricate large arrays of high-performance organic single-crystal field-effect transistors with mobilities as high as 2.4 cm(2) V(-1) s(-1) and on/off ratios greater than 10(7), and devices on flexible substrates that retain their performance after significant bending. These results suggest that our fabrication approach constitutes a promising step that might ultimately allow us to utilize high-performance organic single-crystal field-effect transistors for large-area electronics applications.

Journal Article↗

Polyaniline nanofiber/gold nanoparticle nonvolatile memory.

A nonvolatile plastic digital memory device based on nanofibers of the conjugated polymer polyaniline decorated with gold nanoparticles is reported. The device has a simple structure consisting of the plastic composite film sandwiched between two electrodes. An external bias is used to program the ON and OFF states of the device that are separated by a 3-orders-of-magnitude difference in conductivity. ON-OFF switching times of less than 25 ns are observed by electrical pulse measurements. The devices possess prolonged retention times of several days after they have been programmed. Write-read-erase cycles are also demonstrated. The switching mechanism is attributed to an electric-field-induced charge transfer from the polyaniline nanofibers to the gold nanoparticles. The active polymer layer is created by growing nanometer size gold particles within 30-nm-diameter polyaniline nanofibers using a redox reaction with chloroauric acid. This device combines two exciting research areas--nanoparticles and conducting polymers--to form a novel materials system with unique functionality.

Aniline Compounds↗