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S Heun

Publications and source records attributed to S Heun.

11 recordsLinked to original sources

Diffusion dynamics during the nucleation and growth of Ge/Si nanostructures on Si(111).

We report a low energy electron microscopy study of the relation between self-organized Ge/Si(111)nanostructures and their local environment. By comparison with Monte Carlo simulations, three-dimensional islands are shown to display a substantial tendency towards self-ordering. This tendency may result from the diffusive nature of the nucleation processes. The size of individual nanostructures does not significantly correlate with the distance between neighboring islands. Thus energetic factors are thought to govern the competition among coexisting nanostructures to capture the deposited mass.

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Imaging of ferroelectric thin films by X-ray photoemission electron microscopy (XPEEM).

We performed X-ray photoemission electron microscopy (XPEEM) measurements at the Nanospectroscopy Beamline of the synchrotron light source ELETTRA, Trieste, Italy, to demonstrate the principal possibility of imaging ferroelectric thin films by low-energy photoelectrons. Due to the insulating properties of ferroelectric films, severe surface charging was the major experimental challenge to overcome. This was achieved by grounding an array of gold inter-digital electrodes (with 5 microm blank intervals between them) deposited on top of the films. The images taken with BaTiO(3) films revealed 50-100 nm-sized holes (material discontinuities) on the surface, an observation confirmed by high-resolution scanning electron microscopy (HRSEM). Finer details, e.g. a granular structure, which has been resolved with HRSEM, could not be observed in the XPEEM images. Our measurements indicate that despite some residual charging, a 50 nm lateral resolution can be achieved in XPEEM measurements with ferroelectric films.

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Effects of triplet exciton confinement induced by reduced conjugation length in polyspirobifluorene copolymers.

Using gated optical spectroscopy at low temperatures, a polyspirobifluorene has been compared with an alternating carbazole-spirobifluorene copolymer in which the backbone conjugation is interrupted due to meta coupling of the carbazole moieties. In the copolymer both singlet and triplet energy levels are blueshifted by 130 meV with respect to the homopolymer, resulting in an unaltered singlet-to-triplet splitting. Though the barrier for triplet exciton migration increases from 4.4 to 6.0 meV for the copolymer compared to the homopolymer, it still remained low enough to ensure efficient triplet diffusion at ambient temperature.

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Tuning surface reactivity via electron quantum confinement.

The effect of electron quantum confinement on the surface reactivity of ultrathin metal films is explored by comparing the initial oxidation rate of atomically flat magnesium films of different thickness, using complementary microscopy techniques. Pronounced thickness-dependent variations in the oxidation rate are observed for well ordered films of up to 15 atomic layers. Quantitative comparison reveals direct correlation between the surface reactivity and the periodic changes in the density of electronic states induced by quantum-well states crossing the Fermi level.

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Spatial variation of au coverage as the driving force for nanoscopic pattern formation.

Au induced faceting of a 4 degrees vicinal Si(001) surface was studied with chemical resolution using soft x-ray photoemission electron microscopy. For the first time a direct and quantitative determination of the local Au coverage in situ and during deposition was possible. Au atoms, necessary for the expansion of (001) terraces, are accummulated from a lattice gas, resulting in a phase separation between Au enriched terraces and Au depleted step bunches. During a second stage Au also adsorbs on the step bunches and transforms them into (119) facets. A simple Monte Carlo simulation shows that the initial coverage difference between terraces and bunches determines the regularity of the formed mesoscopic grating.

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