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S Rubanov

Publications and source records attributed to S Rubanov.

2 recordsLinked to original sources

The application of FIB milling for specimen preparation from crystalline germanium.

The effectiveness of focused ion beam (FIB) for preparation of crystalline germanium specimens has been studied. FIB milling results in strong cellular relief of the germanium surfaces on bulk specimens. This cellular relief, associated with the generation of high densities of point defects during interaction of the specimen with the high-energy gallium beam, can be reduced by using either a lower ion beam currents or a lower beam energy. Even under these milling conditions the cellular relief is, however, still evident on the surface of the TEM specimens as evidenced by so-called 'curtaining' relief. Nevertheless good quality specimens for both conventional and high-resolution imaging may be prepared using FIB milling if low currents are employed for final milling.

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FIB-induced damage in silicon.

The damage created in silicon transmission electron microscope specimens prepared using a focused ion beam miller is assessed using cross-sections of trenches milled under different beam conditions. Side-wall damage consists of an amorphous layer formed by direct interaction with the energetic gallium ion beam; a small amount of implanted gallium is also detected. By contrast, bottom-wall damage layers are more complex and contain both amorphous films and crystalline regions that are richer in implanted gallium. More complex milling sequences show that redeposition of milled material, enriched in gallium, can occur depending on the geometry of the mill employed. The thickness of the damage layers depends strongly on beam energy, but is independent of beam current. Monte Carlo modelling of the damage formed indicates that recoil silicon atoms contribute significantly to the damaged formed in the specimen.

Journal Article↗