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S T Lee

Publications and source records attributed to S T Lee.

At least 19 recordsLinked to original sources

Photoconductive characteristics of single-crystal CdS nanoribbons.

The photoconductive characteristics of CdS single nanoribbons were investigated. The device characteristics, including spectral response, light intensity response, and time response, were studied systematically. It is found that CdS nanoribbon has the response speed substantively faster than those ever reported for conventional film and bulk CdS materials and the size of nanoribbons has a significant influence on the response speed with smaller CdS nanoribbons showing higher response speed. The high photosensitivity and high photoresponse speed are attributable to the large surface-to-volume ratio and high single-crystal quality of CdS nanoribbons and the reduction of recombination barrier in nanostructures. Measurements in a different atmosphere demonstrate that the absorption of ambient gas (mainly oxygen) can significantly change the photosensitivity of CdS nanoribbons through trapping electrons from the nanoribbons.

Crystallization↗

Three-dimensional etching profiles and surface speciations (via attenuated total reflection-fourier transform infrared spectroscopy) of silicon nanowires in NH4F-buffered HF solutions: a double passivation model.

A systematic study of the etching behavior, in terms of three-dimensional profiles, of one-dimensional (1-D) silicon nanowires (SiNWs) in NH(4)F-buffered hydrofluoric acid (BHF) solutions of varying concentrations and pH values and the surface speciations of the resulting etched SiNW surfaces, as characterized by attenuated total reflection-Fourier transform infrared (ATR-FTIR) spectroscopy, is reported. It was found that SiNWs are stable only in relatively narrow pH ranges of the BHF solutions. The results are rationalized in terms of a "double passivation" model. When SiNWs are etched in BHF solutions with pH values of 1-3, the surfaces are passivated with hydrogen (inner layer) giving rise to surface moieties such as Si-H(x) species (x = 1-3); at high HF concentrations, the H-terminated Si surfaces are covered with a hydrogen bonding network of HF and related molecules (oligomers, etc.), providing an outer-layer passivation. When SiNWs are etched in BHF solutions with pH values of 11-14 (by adding a strong base such as NaOH), the surfaces are oxygen-terminated with surface moieties such as Si-(O(-))(x)() species (x = 1-3); at high NH(4)F concentrations, the negatively charged Si surfaces are stabilized by NH(4)(+) ions via ionic bonding, again providing outer-layer passivation. In BHF solutions with pH values of 3-11, the surface speciation, consisting of Si-(OH)(x)(O(-))(y) (x + y = 1-3) species, is unstable and etched away rapidly. The surface speciations of SiNWs etched in various BHF solutions were explored via ATR-FTIR spectroscopy. It was found that, while etching SiNWs with HF-rich BHF solutions with pH < 4 gave rise to Si-H(x)() surface species, no surface Si-H(x) species were observed with SiNWs etched in BHF solutions with pH >/= 4 (HF/NH(4)F </= 1:1). In sharp contrast, etching of two-dimensional (2-D) Si wafers with either HF, NH(4)F, or BHF etchants produces Si-H(x) species on the surface. Finally, while HF is a much more efficient etchant than NH(4)F for 2-D Si surfaces, NH(4)F is found to be as efficient an etchant as HF for SiNWs (this work). We believe that these differences can be attributed to the nanometer size (corresponding to the roughness scale in 2-D wafers) of SiNWs on one hand and the lack of "passivation" by the hydrogen bonding network of HF and related molecules at pH >/= 4 on the other. These two factors, among others, contribute to the rapid hydrolysis of the surface Si-H(x)() species (and the etching of the SiNWs), particularly in BHF solutions with low HF/NH(4)F ratios and high pH values (pH >/= 4).

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Structures and energetics of hydrogen-terminated silicon nanowire surfaces.

The analysis and density-functional tight-binding simulations of possible configurations of silicon nanowires (SiNWs) enclosed by low-index surfaces reveal a number of remarkable features. For wires along <100>, <110>, and <111> directions, many low-index facet configurations and cross sections are possible, making their controlled growth difficult. The 112 wires are the most attractive for research and applications because they have only one configuration of enclosing low-index facets with a rectangular cross section, enclosed with the most stable (111) facet and the (110) facet next to it. In general, the stability of the SiNWs is determined by a balance between (1) minimization of the surface energy gamma(111) svr(rectangular)>svr(triangular)]. The energy band gaps follow the order of <100>wires > <112>wires > <111>wires > <110>wires. The results are compared with our recent scanning tunneling microscopy and transmission electron microscopy data.

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Interfacial study of cubic boron nitride films deposited on diamond.

We have studied the nucleation and growth of cubic boron nitride (cBN) films deposited on silicon and diamond-coated silicon substrates using fluorine-assisted chemical vapor deposition (CVD). These comparative studies substantiate that the incubation amorphous/turbostratic BN layers, essential for the cBN nucleation on silicon, are not vital precursors for cBN nucleation on diamond, and they are inherently eliminated. At vastly reduced critical bias voltage, down to -10 V, cBN growth is still maintained on diamond surfaces, and cBN and underlying diamond crystallites exhibit an epitaxial relationship. However, the epitaxial growth is associated with stress in the cBN-diamond interfacial region. In addition, some twinning of crystallites and small-angle grain boundaries are observed between the cBN and diamond crystallites because of the slight lattice mismatch of 1.36%. The small-angle grain boundaries could be eliminated by imposing a little higher bias voltage during the initial growth stage. The heteroepitaxial growth of cBN films on different substrate materials are discussed in the view of lattice matching, surface-energy compatibility, and stability of the substrate against ion irradiation.

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Simulation of water cluster assembly on a graphite surface.

The assembly of small water clusters (H2O)n, n = 1-6, on a graphite surface is studied using a density functional tight-binding method complemented with an empirical van der Waals force correction, with confirmation using second-order Møller-Plesset perturbation theory. It is shown that the optimized geometry of the water hexamer may change its original structure to an isoenergy one when interacting with a graphite surface in some specific orientation, while the smaller water cluster will maintain its cyclic or linear configurations (for the water dimer). The binding energy of water clusters interacting with graphite is dependent on the number of water molecules that form hydrogen bonds, but is independent of the water cluster size. These physically adsorbed water clusters show little change in their IR peak position and leave an almost perfect graphite surface.

Journal Article↗

Calcium/poly(9,9-dioctylfluorene) interaction: a theoretical study.

The geometric and electronic structures of poly(9,9-dioctylfluorene) (PFO) oligomer interacting with Ca atoms were studied using Møller-Plesset perturbation theory. A weak interaction with little charge transfer and with a relatively long Ca-C distance (about 4.0 Angstrom) was found when only one Ca atom was attached to a PFO unit. However, when two Ca atoms were adsorbed at a PFO unit, a strong interaction with a shorter Ca-C distance (about 2.67 Angstrom) took place with considerable charge transfer from the Ca atom to the PFO, resulting in significant deformation in the backbone of the PFO oligomer. In the latter case, the frontier orbitals of the PFO were modified. However, the deformed PFO and its modified frontier orbitals could be recovered when oxygen was added, which is in good agreement with experimental observation.

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Etching behavior of silicon nanowires with HF and NH4F and surface characterization by attenuated total reflection Fourier transform infrared spectroscopy: similarities and differences between one-dimensional and two-dimensional silicon surfaces.

A systematic study of the etching behavior of one-dimensional (1-D) Si nanowires (SiNWs) in various HF and NH4F etching solutions is reported. The concentration and pH dependences of the etching time (which is inverse to the "stability") of the SiNWs in these solutions were investigated. A V-shaped bimodal etching curve was observed for HF solutions with concentrations of 0.5-40%. Specifically, SiNWs exhibit high stability in both low (0.5%) and high (40%) concentrations of HF solution, with the lowest stability (i.e., fastest etching rate) occurring at 2% (1 M) HF solution. With NH4F, the time needed to totally etch away the SiNWs sample decreases with increasing concentration (from 1-40%). The opposite is true when the pH of the NH4F solution was maintained at 14. These surprising results were rationalized in terms of "passivation" of the SiNW surfaces by HF or related molecules via hydrogen bonding for Si-H-terminated surfaces in HF solutions (with low pH values) and by NH4(+) ions via ionic bonding for Si-O(-)-terminated surfaces in NH4F solutions (with high pH values), respectively. Furthermore, it was found that SiNWs are stable only in relatively narrow pH ranges in these solutions. When SiNWs are etched with HF, the stability range is pH = 1-2 where the surface moieties are Si-H(x) species (x = 1-3). When SiNWs are etched with NH4F, the stability range is pH = 12-14 where the surface moieties are mainly Si-(O-)x species (x = 1-3). These rationales were confirmed by attenuated total reflection Fourier transform infrared spectroscopy measurements, which showed that, while etching SiNWs with HF gave rise to Si-H(x) surface species, no Si-H(x) species were observed when SiNWs were etched with NH4F. The latter finding is at odds with the corresponding results reported for the two-dimensional (2-D) Si wafers where etching with either HF or NH4F produces Si-H(x) species on the surface. This difference suggests either that the etching mechanisms for NH4F versus HF are different for SiNWs or, more likely, that the Si-H(x) surface species produced in NH4F solutions are so unstable that they are hydrolyzed readily at pH > 4. The similarities and differences of the etching behaviors and the resulting surface speciations between the 1-D SiNWs and the 2-D Si wafers suggest that the nanoscale structures as well as the low dimensionality of SiNWs may have contributed to the rapid hydrolysis of the surface Si-H(x) species in NH4F solutions, especially at high pH values.

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Molecular orientation and film morphology of pentacene on native silicon oxide surface.

The growth morphology and mechanism of pentacene films on native Si oxide surface have been studied by using high-resolution electron energy loss spectroscopy (HREELS), X-ray diffraction (XRD), and atomic force microscopy (AFM). Despite the good agreement between our own and the reported XRD results, the previous XRD interpretation that the pentacene molecules are tilt-standing on the substrate cannot explain our HREELS data. The HREELS results show that a substantial portion of the first two layers of pentacene molecules are tilted-standing or randomly oriented, whereas the upper-layer molecules are mostly lying flat to the substrate. AFM reveals that the first two layers of molecules form a flat and smooth surface, but the upper layers show a rough terrace structure with a mean-square roughness equal to the average thickness (without counting the first two layers). This relationship is explained by a theoretical model which assumes the pentacene molecules to remain on a particular molecule layer after arrival. The observed film growth morphology may have significant implication on the performance of electronic devices based on pentacene thin films. A plausible explanation was proposed for the discrepancy between the HREELS-indicated and the XRD-derived molecular orientations.

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Evaluation of cell culture on the polyurethane-based membrane (Tegaderm): implication for tissue engineering of skin.

BACKGROUND: The use of polymer-based delivery systems, on which cells are cultured and transferred, improves the ease of handling and transfer of the keratinocytes. A transparent polymer also allows observation of cell growth prior to grafting as well as re-epithelialization after grafting to the wound. We have developed techniques for cultured keratinocytes on Tegaderm (3M), an inexpensive and easily available polyurethane-based wound dressing, for treatment of burn and chronic wounds. In this study, we evaluate cell culture characteristics of three different cell types, human epidermal keratinocytes, human dermal fibroblasts and pig bone marrow mesenchymal stem cells on Tegaderm membrane. METHODS: Cells were isolated from human skin or pig bone marrow and cultured on membranes for a period of five days. Cell proliferation was assessed by colorimetric assay (MTT) and scanning electron microscopy. RESULTS AND CONCLUSIONS: This study confirms that Tegaderm membranes support attachment and growths for these cell types, with those growth characteristics are similar, if not as good as that of optimal condition of tissue culture plastics. Data from our study suggest that Tegaderm membranes can be used, modified and developed further as an economical and easily available material for tissue engineered skin.

Animals↗

Locoweed (Oxytropis sericea)-induced lesions in mule deer (Odocoileius hemionus).

Locoweed poisoning has been reported in wildlife, but it is unknown whether mule deer (Odocoileius hemionus) are susceptible. In areas that are heavily infested with locoweed, deer and elk (Cervus elaphus nelsoni) have developed a spongiform encephalopathy, chronic wasting disease (CWD). Although these are distinct diseases, no good comparisons are available. The purpose of this study was to induce and describe chronic locoweed poisoning in deer and compare it with the lesions of CWD. Two groups of four mule deer were fed either a complete pelleted ration or a similar ration containing 15% locoweed (Oxytropis sericea). Poisoned deer lost weight and developed a scruffy, dull coat. They developed reluctance to move, and movement produced subtle intention tremors. Poisoned deer had extensive vacuolation of visceral tissues, which was most severe in the exocrine pancreas. Thyroid follicular epithelium, renal tubular epithelium, and macrophages in many tissues were mildly vacuolated. The exposed deer also had mild neuronal swelling and cytoplasmic vacuolation that was most obvious in Purkinje cells. Axonal swelling and dystrophy was found in many white tracts, but it was most severe in the cerebellar peduncles and the gracilis and cuneate fasciculi. These findings indicate that deer are susceptible to locoweed poisoning, but the lesions differ in severity and distribution from those of other species. The histologic changes of locoweed poisoning are distinct from those of CWD in deer; however, the clinical presentation of locoweed poisoning in deer is similar. Histologic and immunohistochemical studies are required for a definitive diagnosis.

Animals↗

Metabolic sensitivity of pancreatic tumour cell apoptosis to glycogen phosphorylase inhibitor treatment.

Inhibitors of glycogen breakdown regulate glucose homeostasis by limiting glucose production in diabetes. Here we demonstrate that restrained glycogen breakdown also inhibits cancer cell proliferation and induces apoptosis through limiting glucose oxidation, as well as nucleic acid and de novo fatty acid synthesis. Increasing doses (50-100 microM) of the glycogen phosphorylase inhibitor CP-320626 inhibited [1,2-(13)C(2)]glucose stable isotope substrate re-distribution among glycolysis, pentose and de novo fatty acid synthesis in MIA pancreatic adenocarcinoma cells. Limited oxidative pentose-phosphate synthesis, glucose contribution to acetyl CoA and de novo fatty acid synthesis closely correlated with decreased cell proliferation. The stable isotope-based dynamic metabolic profile of MIA cells indicated a significant dose-dependent decrease in macromolecule synthesis, which was detected at lower drug doses and before the appearance of apoptosis markers. Normal fibroblasts (CRL-1501) did not show morphological or metabolic signs of apoptosis likely due to their slow rate of growth and metabolic activity. This indicates that limiting carbon re-cycling and rapid substrate mobilisation from glycogen may be an effective and selective target site for new drug development in rapidly dividing cancer cells. In conclusion, pancreatic cancer cell growth arrest and death are closely associated with a characteristic decrease in glycogen breakdown and glucose carbon re-distribution towards RNA/DNA and fatty acids during CP-320626 treatment.

Amides↗

Silicon monoxide clusters: the favorable precursors for forming silicon nanostructures.

Using density-functional calculations, we show that the energetically favorable configurations of silicon monoxide clusters (SiO)n for n> or =5 facilitate the nucleation and growth of silicon nanostructures as the clusters contain sp3 silicon cores surrounded by silicon oxide sheaths. The frontier orbitals of (SiO)n clusters are localized to a significant degree on the silicon atoms on the surface, providing high reactivity for further stacking with other clusters. The oxygen atoms in the formed larger clusters prefer to migrate from the centers to the exterior surfaces, leading to the growth of sp3 silicon cores.

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Visualization of diamond nucleation and growth from energetic species.

The mystery of diamond nucleation by energetic species is resolved via a special deposition scheme. The evolution of the precursor material for diamond nucleation and the development of the nanodiamond crystallites are visualized by high resolution electron microscopy and other spectroscopies. The diamond precipitation and growth are explained in terms of our recently proposed mechanism [Science 297, 1531 (2002)]]: (i) precipitation of sp(3) clusters a small fraction of which are perfect diamond; (ii) growth of diamond crystallites by preferential displacement of amorphous carbon atoms leaving diamond atoms intact. This general scheme is applicable to other materials such as cubic boron nitride.

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Complications of fixation to the occiput-anatomical and design implications.

Internal fixation provides an increased immediate stability for the craniovertebral junction; however, there is no current consensus on the optimal method of occipitocervical (OC) fusion. In this report, we present 25 cases of craniovertebral instability treated with OC fusion by plates and screws instrumentation. The 25 cases comprised 12 men and 13 women, whose ages ranged 20 to 78 years. The principal aetiologies that lead to the OC instability of the patients in this series included trauma, rheumatoid arthritis, neoplasm and congenital abnormality. The fusion levels ranged from occiput-C3 to occiput-C6. Two mortalities occurred. The other patients showed satisfactory union after a follow-up of eight to 24 months. OC fusion using a plates and screws system is a safe and highly effective method for providing immediate internal stability to the OC junction. The internal occipital anatomy, which cannot be seen at surgery, is important when dealing with this taxing and potentially dangerous aspect of surgery.

Adult↗

A review: the location, molecular characterisation and multipotency of hair follicle epidermal stem cells.

INTRODUCTION: Recent work has focused on the hair follicle as the main repository of multipotent stem cells in skin, which is a neat model to study the mechanisms regulating the proliferation, migration and final fate of adult stem cells. This review examines the available literature for its location, molecular markers and multipotency. METHODS: Peer-reviewed journals and monographs on the subject were covered. RESULTS: With the application of stem cell-labelling techniques and clonogenicity assay, it is clear that most of the hair follicle stem cells are located at the bulge region, but the base of the hair follicle does contain some clonogenic cells; whether they are stem cells is still unknown. Extensive works have been done in identifying hair follicle stem cells. The potential markers for hair follicle stem cells include: b1-integrin, keratin 19, a6- integrin, CD71, p63, and CD34. Most of these markers are expressed in high levels in hair follicle stem cells, but there is still difficulty in distinguishing hair follicle stem cells from their transitamplifying progeny, and the sorted hair follicle stem cells with these markers are far from pure. As hair follicle stem cells might have been activated after leaving the stem cell niche, the markers for cells in vitro might not be identical to those in vivo. Using double-labelling techniques with BrdU and 3H-Thymidine, and the creation of novel chimera transgenic mice, it was proved that hair follicle stem cells can repopulate wound epidermis, forming epidermis, hair follicles and sebaceous glands, but it contributes little to the epidermis in physiological condition, except the hair follicle. CONCLUSIONS: Slow cycling, label-retaining cells exist at the bulge of the hair follicle, with high proliferative potential and clonogenicity. The putative bulge stem cells can contribute to the epidermis, outer root sheath, inner root sheath, hair shaft and sebaceous gland. However, they still lack certain markers to distinguish bulge stem cells from their progeny, and much work needs to focus on the interrelations between bulge cells and interfollicular keratinocyte stem cells, the relations between bulge cells and dermal papilla mesenchyme cells, and the mechanism of hair growth.

Animals↗

Silicon-silica nanowires, nanotubes, and biaxial nanowires: inside, outside, and side-by-side growth of silicon versus silica on zeolite.

It was demonstrated that zeolite can be used as a pseudo-template to grow very fine and uniform silicon nanostructures via disproportionation reaction of SiO by thermal evaporation. Three distinct types of composite nanowires and nanotubes of silicon and silica were grown on the surfaces of zeolite Y pellets. The first type is formed by an ultrafine crystalline silicon nanowire sheathed by an amorphous silica tube (a silicon nanowire inside a silica nanotube). The second type is formed by a crystalline silicon nanotube filled with amorphous silica (a silicon nanotube outside a silica nanowire). The third type is a biaxial silicon-silica nanowire structure with side-by-side growth of crystalline silicon and amorphous silica. These silicon nanostructures exhibit unusually intense photoluminescence (in comparison to ordinary silicon nanowires).

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