Photoinduced oxidation of InP(110) with condensed O2 at 25 K.
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Biomedical subjects
SG Anderson
Publications and source records attributed to SG Anderson.
InP(110) oxidation with O2, NO, and N2O at 20 K: Temperature and photon-energy dependencies.
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X-ray-induced low-temperature oxidation: N2O/GaAs(110).
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O2/GaAs(110) interface formation at 20 K: Photon-induced reaction and desorption.
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CoSi2(111), FeSi2(001), and MoSi2(001) surfaces and interfaces with Ti.
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Abrupt interfaces with novel structural and electronic properties: Metal-cluster deposition and metal-semiconductor junctions.
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Dynamic photoinduced low-temperature oxidation of GaAs(110).
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Dynamic-coupling model: Interpretation of temperature-, dopant-concentration-, and coverage-dependent Schottky-barrier formation.
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Temperature-dependent Al/GaAs(110) interface formation and adatom energy references.
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Temperature effects for Ti/GaAs(110) interface formation involving cluster and atom deposition.
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Reversible temperature-dependent Fermi-level movement for metal-GaAs(110) interfaces.
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Dopant concentration dependences and symmetric Fermi-level movement for metal/n-type and p-type GaAs(110) interfaces formed at 60 K.
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Photoemission studies of interface chemistry and Schottky barriers for ZnSe(100) with Ti, Co, Cu, Pd, Ag, Au, Ce, and Al.
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Schottky-barrier formation and atomic mixing at Au/ZnSe(100) and Co/ZnSe(100) interfaces with Co and Au interlayers.
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Inelastic mean free paths for electrons at disordered interfaces.
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Band-gap discontinuities for Ge/ZnSe(100) and Si/ZnSe(100): A photoemission study.
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Temperature-dependent reaction and atomic redistribution for Ti/GaAs(100) interfaces.
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