Aligned defect complex containing carbon and hydrogen in as-grown GaAs epitaxial layers.
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Biomedical subjects
SJ Pearton
Publications and source records attributed to SJ Pearton.
Symmetry, stress alignment, and reorientation kinetics of the SiAs-H complex in GaAs.
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Ground-state energy shift of acceptor-hydrogen complexes in Si and GaAs under uniaxial stress.
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Single-electron capacitance spectroscopy of discrete quantum levels.
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Exponential diffusion profile for impurity trapping at an unsaturable trap.
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Identification of a Fermi resonance for a defect in silicon: Deuterium-boron pair.
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Structure and dynamics of the Be-H complex in GaAs.
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Hydrogen motion in defect complexes: Reorientation kinetics of the B-H complex in silicon.
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Structure of acceptor-hydrogen and donor-hydrogen complexes in silicon from uniaxial stress studies.
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Vibrational spectroscopy of acceptor-hydrogen complexes in silicon: Evidence for low-frequency excitations.
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Donor-hydrogen complexes in passivated silicon.
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Lattice location of deuterium interacting with the boron acceptor in silicon.
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Dopant-type effects on the diffusion of deuterium in GaAs.
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Local structure of S impurities in GaAs.
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