PubMed Health⌕ Search

Biomedical subjects

Shih-Yuan Lu

Publications and source records attributed to Shih-Yuan Lu.

10 recordsLinked to original sources

Formation of parallel strips in thin films of polystyrene/poly(vinyl pyrrolidone) blends via spin coating on unpatterned substrates.

Patterns of parallel strips, consisting of alternating polystyrene (PS) and poly(vinyl pyrrolidone) (PVP) regions, were observed in thin films spin cast from a PS/PVP/chloroform solution on unpatterned substrates. The formation of anisotropic patterns, manifested not only in thickness variation but also in composition variation, was found to be driven by Marangoni instability, with the PS and PVP streams flowing toward the preferred regions as the phase separation induced by solvent evaporation proceeded. The initial viscosity of the polymer solution and the thickness of the spin-cast films were lumped into one single parameter to study the phase morphology development at various initial polymer solution concentrations. Interestingly, the ratio of the square of the film thickness to the viscosity, a parameter loosely related to the Marangoni number, was found to reach a maximum value at the concentration where the strip patterns were most well-developed.

Journal Article↗

Patch-distribution effect on diffusion-limited process in dilute suspension of partially active spheres.

The normalized overall rate constant, kp/kf for diffusion-limited processes in a dilute suspension of spheres, partially covered with active patches of varying distribution states, is studied with sped-up Brownian dynamic simulations. A dimensionless separation index Is is defined to quantify the characteristics of patch distribution on the sphere surfaces, with values of 0 and 1 corresponding to the states of the most compact and loosest patch distributions, respectively. Remarkably, the normalized overall rate constant is found to strongly correlate with the dimensionless separation index at fixed patch coverage fcover exhibiting a positive, linear relationship. In addition, the slope of the kp/kf vs Is line, a measure of sensitivity of kp/kf to variation in the separation state of the distributed patches, is found to depend on patch coverage and patch size. This sensitivity exhibits a maximum value with respect to an increase in patch coverage, and the magnitude of the maximum sensitivity decreases with increasing patch size. The patch coverage, at which the maximum sensitivity occurs, increases with increasing patch size.

Journal Article↗

Nanostructures of Sn and their enhanced, shape-dependent superconducting properties.

A noncatalytic and template-free vapor transport process was developed to make possible simultaneous growth of single-crystalline tin nanowires, nanosquares, nanodisks, and polycrystalline nanoparticles. The formation of such a rich variety of morphologies in a single growth experiment can be attributed to variations in the growth rate among different crystallographic planes when employing the vapor-solid growth mechanism. Structural characterization with high-resolution transmission electron microscopy reveals a preferential growth direction of [100] in Sn nanowires, nanosquares, and nanodisks. Shape-dependent superconducting properties are observed. These four types of Sn nanostructures all show typical diamagnetic behavior in magnetization measurements, with the three anisotropically shaped nanostructures (nanowires, nanosquares, and nanodisks) showing one order of magnitude enhancement in the working magnetic field ranges for superconductivity, compared to bulk Sn and Sn nanoparticles. The magnetic field range is broadest for nanowires, followed by nanodisks, nanosquares, and nanoparticles.

Crystallization↗

Vapor-solid growth of Sn nanowires: growth mechanism and superconductivity.

A noncatalytic and template-free vapor transport process has been employed to prepare single-crystalline Sn nanowires with diameters of 10-20 nm. The growth of one-dimensional Sn nanowires follows the mechanism similar to the vapor-solid (V-S) mechanism. Two-dimensional square-shaped nanostructures were also found to form in the region of lower deposition temperatures. The rich morphology may be attributed to the competition in growth rate among different crystallographic planes. Structural characterization with high-resolution transmission electron microscopy showed that the nanowires and nanosquares grew in a preferential direction of [200]. The superconducting transition temperatures for Sn nanowires and Sn nanosquares were about 3.7 K, which was very close to that of bulk beta-Sn. Magnetization measurements showed that the critical magnetic fields for both Sn nanowires and Sn nanosquares increased significantly as compared to that of bulk Sn.

Journal Article↗

One-step preparation of coaxial CdS-ZnS nanowires.

A new approach was developed to prepare coaxial (core-shell) CdS-ZnS nanowires via a one-step metallo-organic chemical vapor deposition (MOCVD) process with co-fed single source precursors of CdS and ZnS. Single source precursors of CdS and ZnS with sufficiently different reactivity were prepared and paired up to form the coaxial heterostructure in a one-step process.

Journal Article↗

Patch size effect on diffusion and incorporation in dilute suspension of partially active spheres.

The normalized overall rate constant kp/kf for diffuse-and-incorporate processes in dilute suspension of spheres partially covered with randomly distributed nonoverlapping active patches is studied with a sped-up Brownian dynamic simulation scheme. The normalized overall rate constant is found to increase with decreasing characteristic size of the active patch under the condition of fixed fcover, the surface area fraction covered by the active patches. A scaling relation is proposed as (kp/kf)NDL/[(1 + P) - (1 + P/fcover)(kp/kf)NDL] approximately Np(1/2) with Np being the number of active patches on the sphere, P a parameter characterizing the relative dominance of surface incorporation over diffusion, and NDL signifying the nondiffusion-limited condition. This scaling relation is verified with rate constant data from the sped-up Brownian dynamic simulation. From this scaling relation, the maximum achievable kp/kf is derived to be (1 + P)/(1 + P/fcover). This result implies that kp/kf can approach unity under the diffusion-limited situation even for a partially active sphere by reducing the size of active patch, while it is not possible to achieve unit kp/kf for nondiffusion-limited systems.

Journal Article↗

Preparation of nanosized ZnS-passivated CdS particle films via the MOCVD process with co-fed single source precursors.

A novel approach was developed to prepare thin films of nanosized ZnS-passivated CdS particles via a metal-organic chemical vapor deposition (MOCVD) process with co-fed single source precursors of CdS and ZnS. Single source precursors of CdS and ZnS with sufficiently different reactivity, as judged from thermogravimetry analysis, were prepared and paired up to form ZnS-passivated CdS, (CdS)ZnS, and CdS-modified ZnS, (ZnS)CdS, particle films in a one-step process. For comparison purposes, sequential layer growth of CdS/ZnS and ZnS/CdS particle films was also conducted, and single compound particle films were prepared. These films were characterized with absorption spectrometry, photoluminescence spectroscopy, scanning electron microscopy, and powder X-ray diffraction spectra. The photoluminescence efficiency of the resulting composite particle film of ZnS-passivated CdS was significantly enhanced as compared to that of the plain CdS film, due to the effective passivation of surface electronic states of CdS by ZnS, a material with a higher conduction band than that of CdS. As for particle films of CdS-modified ZnS, a decay in photoluminescence efficiency was observed. The enhancement or decay in photoluminescence efficiency was much more pronounced for the passivated and modified system than for the sequential layer system, proportional to the interfacial area between the CdS and ZnS phases.

Cadmium Compounds↗

Photoluminescence resulting from semiconductor-metal solid solution observed in one-dimensional semiconductor nanostructures.

A narrow band photoluminescence (PL) emission peak resulting from CdS-Au solid solution was observed when growing one-dimensional nanostructures of CdS via the vapor-liquid-solid mechanism by using Au as the catalyst. This emission peak was located at 680 nm, a wavelength longer than the near band edge emission of CdS at 520 nm, and was shown not to be caused by the usual trap states of CdS which lead to a broad band emission. Here, the one-dimensional nanostructures of CdS were grown in a simple, low-temperature (360 degrees C) metal-organic chemical vapor deposition process with a single source precursor of CdS. Straight nanowires of diameter 50-70 nm and wormlike nanorods of diameter 100-200 nm were obtained. Both the upper and lower portions of the nanorods/nanowires possessed single crystallinity as judged from the corresponding high-resolution transmission electron microscopy images and selected area electron diffraction data. This work demonstrates the feasibility of adjusting PL emission peaks of optoelectronic semiconductors through alloying with metals.

Cadmium Compounds↗

Determination of effective conductivities of imperfect contact composites with first-passage simulation.

A first-passage simulation scheme is developed to determine the effective conductivities of composites with matrix-inclusion interfaces of imperfect contact. The necessary mean hitting probabilities and mean scaled traveling times of the probing walkers in the close vicinity of the imperfect contact interface are derived by solving proposed boundary value problems. The developed scheme is first validated through application in the effective conductivity problem of composites containing periodically arranged spherical inclusions for which accurate results are available for comparison, and is then further applied to the effective conductivity problem of composites containing randomly distributed spherical inclusions. The present development treats the more general imperfect contact problem, with the perfect contact problem as one special case.

Journal Article↗