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Sokrates T Pantelides

Publications and source records attributed to Sokrates T Pantelides.

7 recordsLinked to original sources

Spin-dependent resonant tunneling through quantum-well states in magnetic metallic thin films.

Quantum-well (QW) states in nonmagnetic metal films between magnetic layers are known to be important in spin-dependent transport, but QW states in magnetic films remains elusive. Here we identify the conditions for resonant tunneling through QW states in magnetic films and report first principles calculations of Fe/MgO/FeO/Fe/Cr and Co/MgO/Fe/Cr. We show that, at resonance, the current increases by 1 to 2 orders of magnitude. The tunneling magnetoresistance ratio is much larger than in simple spin tunnel junctions and is positive (negative) for majority- (minority-) spin resonances, with a large asymmetry between positive and negative biases. The results can serve as a basis for novel spintronic devices.

Journal Article↗

Bonding configurations and collective patterns of Ge atoms adsorbed on Si(111)-(7 x 7).

We report scanning tunneling microscopy observations of Ge deposited on the Si(111)-(7 x 7) surface for a sequence of submonolayer coverages. We demonstrate that Ge atoms replace so-called Si adatoms. Initially, the replacements are random, but distinct patterns emerge and evolve with increasing coverage, until small islands begin to form. Corner adatom sites in the faulted half unit cells are preferred. First-principles density functional calculations find that adatom substitution competes energetically with a high-coordination bridge site, but atoms occupying the latter sites are highly mobile. Thus, the observed structures are indeed more thermodynamically stable.

Journal Article↗

"Lagrange functions": a family of powerful basis sets for real-space order-N electronic structure calculations.

Plane waves have unparalleled simplicity and systematic convergence by a single monotonic parameter, the energy cutoff, but they are limited to speriodic systems and require Fourier transforms that scale as N(2)logN, where N is the number of atoms. Real-space methods for order-N scaling are computationally complex and convergence depends on several variables. Here we introduce and demonstrate "Lagrange functions" as a family of analytical, complete, and orthonormal basis sets that are suitable for efficient, accurate, real-space, order-N electronic structure calculations. Convergence is controlled by a single monotonic parameter, the dimension of the basis set, and computational complexity is lower than that of plane waves.

Journal Article↗

Dopants adsorbed as single atoms prevent degradation of catalysts.

The design of catalysts with desired chemical and thermal properties is viewed as a grand challenge for scientists and engineers. For operation at high temperatures, stability against structural transformations is a key requirement. Although doping has been found to impede degradation, the lack of atomistic understanding of the pertinent mechanism has hindered optimization. For example, porous gamma-Al(2)O(3), a widely used catalyst and catalytic support, transforms to non-porous alpha-Al(2)O(3) at approximately 1,100 degrees C (refs 7-10). Doping with La raises the transformation temperature to approximately 1,250 degrees C, but it has not been possible to establish if La atoms enter the bulk, adsorb on surfaces as single atoms or clusters, or form surface compounds. Here, we use direct imaging by aberration-corrected Z-contrast scanning transmission electron microscopy coupled with extended X-ray absorption fine structure and first-principles calculations to demonstrate that, contrary to expectations, stabilization is achieved by isolated La atoms adsorbed on the surface. Strong binding and mutual repulsion of La atoms effectively pin the surface and inhibit both sintering and the transformation to alpha-Al(2)O(3). The results provide the first guidelines for the choice of dopants to prevent thermal degradation of catalysts and other porous materials.

Aluminum Oxide↗

Atomic scale mechanism of the transformation of gamma-alumina to theta-alumina.

gamma-alumina is known to transform to theta-alumina and finally to alpha-alumina upon thermal treatment with a catastrophic loss of porosity and catalytic activity. First-principles calculations were performed to investigate the atomic scale mechanism of the gamma- to theta-alumina transformation. The transformation pathways between the two different forms have been mapped out and identified as a sequence of Al cation migrations. Different possible Al migration paths may be responsible for the experimentally observed formation of domains and twins in theta-alumina. The estimated temperature dependence of the conversion rate is in excellent agreement with the experimental transformation temperature.

Journal Article↗

First-principles simulations of molecular electronics.

This paper gives an overview of recent work by the authors in first-principles, parameter-free calculations of electronic transport in molecules in the context of experimental measurements of current-voltage (I-V) characteristics of several molecules by Reed et al. The results show that the shape of I-V characteristics is determined by the electronic structure of the molecule in the presence of the external voltage, whereas the absolute magnitude of the current is determined by the chemistry of individual atoms at the contacts. A three-terminal device has been simulated, showing gain. Finally, recent data that show large negative differential resistance and a peak that shifts substantially as a function of temperature have been accounted for in terms of rotations of ligands attached to the main molecule, a phenomenon that is not present in semiconductor nanostructures.

Benzene↗