Biomedical subjects

T Dekorsy

Publications and source records attributed to T Dekorsy.

At least 19 recordsLinked to original sources

PubMed2003

Infrared-phonon-polariton resonance of the nonlinear susceptibility in GaAs.

Nonlinear probing of the fundamental lattice vibration of polar crystals is shown to reveal insight into higher-order cohesive lattice forces. With a free-electron laser tunable in the far infrared we experimentally investigate the dispersion of the second-order susceptibility due to the phonon resonance in GaAs. We observe a strong resonance enhancement of second harmonic light generation at half the optical phonon frequency, and in addition a minimum at a higher frequency below the phonon frequency. Measuring this frequency and comparison to a theoretical model allows the determination of competing higher-order lattice forces.

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PubMed2002

Two crossovers in the Pseudogap regime of YBa 2Cu 3O (7-delta) superconductors observed by ultrafast spectroscopy.

We have investigated the temperature dependence of the optical reflectivity on a femtosecond scale in a near optimally doped YBa 2Cu 3O (7-delta) superconductor. The combined study of the lattice and carrier dynamics at temperatures above T(c) allows us to identify two crossover temperatures in the normal state, giving evidence for an inhomogeneity of the pseudogap regime. These crossovers exhibit a clear hysteresis behavior depending on the direction of temperature change. The carrier and lattice dynamics within the crossover regimes show distinct differences from and similarities to the superconducting state, which may help in choosing between the competing theories for the pseudogap state.

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PubMed2001

Mechanisms for the generation of coherent longitudinal-optical phonons in GaAs /AlGaAs multiple quantum wells.

We show that coherent optical phonons in GaAs multiple quantum wells are generated in a completely different way as compared to bulk GaAs. Unlike in bulk GaAs where the ultrafast screening of electric fields by photogenerated charge carriers is known to be dominant, three distinctive generation mechanisms contribute simultaneously in multiple quantum wells. The interplay between impulsive Raman scattering, forbidden Raman scattering, and screening of surface electric fields, whose relative strengths are determined by laser intensity, detuning from the exciton resonance, and the barrier width, generates a rich variety of new phenomena.

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PubMed2000

Coupled bloch-phonon oscillations in semiconductor superlattices

We investigate coherent Bloch oscillations in GaAs/AlxGa1-xAs superlattices with electronic miniband widths larger than the optical phonon energy. In these superlattices the Bloch frequency can be tuned into resonance with the optical phonon. Close to resonance a direct coupling of Bloch oscillations to LO phonons is observed which gives rise to the coherent excitation of LO phonons. The density necessary for driving coherent LO phonons via Bloch oscillations is about 2 orders of magnitude smaller than the density necessary to drive coherent LO phonons in bulk GaAs. The experimental observations are confirmed by the theoretical description of this phenomenon [A.W. Ghosh et al., Phys. Rev. Lett. 85, 1084 (2000)].

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PubMed2000

Impulsive excitation of phonon-pair combination states by second-order raman scattering

The excitation of (100)-oriented KTaO3 with 25-fs laser pulses impulsively drives phonon-pair combination states via second-order Raman scattering. Oscillations in the phonon-amplitude covariance at the sum and difference frequency of the two involved phonons are observed in a spectrally and temporally resolved pump-probe experiment. Transmission changes of the sample are dominated by contributions of wave vector conserving phonon-pair combinations from the entire Brillouin zone that have maxima in their combined density of states. For low temperatures the temperature dependence of the covariance oscillations of different phonon combinations is reproduced by a quantum-mechanical model.

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PubMed1999

Formation of Ordered Nanoscale Semiconductor Dots by Ion Sputtering.

A formation process for semiconductor quantum dots based on a surface instability induced by ion sputtering under normal incidence is presented. Crystalline dots 35 nanometers in diameter and arranged in a regular hexagonal lattice were produced on gallium antimonide surfaces. The formation mechanism relies on a natural self-organization mechanism that occurs during the erosion of surfaces, which is based on the interplay between roughening induced by ion sputtering and smoothing due to surface diffusion.

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PubMed1996