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T Jungwirth

Publications and source records attributed to T Jungwirth.

16 recordsLinked to original sources
PubMed2006

Coulomb blockade anisotropic magnetoresistance effect in a (Ga,Mn)As single-electron transistor.

We observe low-field hysteretic magnetoresistance in a (Ga,Mn)As single-electron transistor which can exceed 3 orders of magnitude. The sign and size of the magnetoresistance signal are controlled by the gate voltage. Experimental data are interpreted in terms of electrochemical shifts associated with magnetization rotations. This Coulomb blockade anisotropic magnetoresistance is distinct from previously observed anisotropic magnetoresistance effects as it occurs when the anisotropy in a band structure derived parameter is comparable to an independent scale, the single-electron charging energy. Effective kinetic-exchange model calculations in (Ga,Mn)As show chemical potential anisotropies consistent with experiment and ab initio calculations in transition metal systems suggest that this generic effect persists to high temperatures in metal ferromagnets with strong spin-orbit coupling.

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PubMed2005

Large tunneling anisotropic magnetoresistance in (Ga,Mn)As nanoconstrictions.

We report a large tunneling anisotropic magnetoresistance (TAMR) in (Ga,Mn)As lateral nanoconstrictions. Unlike previously reported tunneling magnetoresistance effects in nanocontacts, the TAMR does not require noncollinear magnetization on either side of the constriction. The nature of the effect is established by a direct comparison of its phenomenology with that of normal anisotropic magnetoresistance (AMR) measured in the same lateral geometry. The direct link we establish between the TAMR and AMR indicates that TAMR may be observable in other materials showing room temperature AMR and demonstrates that the physics of nanoconstriction magnetoresistive devices can be much richer than previously thought.

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PubMed2005

Experimental observation of the spin-Hall effect in a two-dimensional spin-orbit coupled semiconductor system.

We report the experimental observation of the spin-Hall effect in a 2D hole system with spin-orbit coupling. The 2D hole layer is a part of a p-n junction light-emitting diode with a specially designed coplanar geometry which allows an angle-resolved polarization detection at opposite edges of the 2D hole system. In equilibrium the angular momenta of the spin-orbit split heavy-hole states lie in the plane of the 2D layer. When an electric field is applied across the hole channel, a nonzero out-of-plane component of the angular momentum is detected whose sign depends on the sign of the electric field and is opposite for the two edges. Microscopic quantum transport calculations show only a weak effect of disorder, suggesting that the clean limit spin-Hall conductance description (intrinsic spin-Hall effect) might apply to our system.

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PubMed2005

Very large tunneling anisotropic magnetoresistance of a (Ga,Mn)As/GaAs/(Ga,Mn)As stack.

We report the discovery of a very large tunneling anisotropic magnetoresistance in an epitaxially grown (Ga,Mn)As/GaAs/(Ga,Mn)As structure. The key novel spintronics features of this effect are as follows: (i) both normal and inverted spin-valve-like signals; (ii) a large nonhysteretic magnetoresistance for magnetic fields perpendicular to the interfaces; (iii) magnetization orientations for extremal resistance are, in general, not aligned with the magnetic easy and hard axis; (iv) enormous amplification of the effect at low bias and temperatures.

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PubMed2004

Tunneling anisotropic magnetoresistance: a spin-valve-like tunnel magnetoresistance using a single magnetic layer.

We introduce a new class of spintronic devices in which a spin-valve-like effect results from strong spin-orbit coupling in a single ferromagnetic layer rather than from injection and detection of a spin-polarized current by two coupled ferromagnets. The effect is observed in a normal-metal-insulator-ferromagnetic-semiconductor tunneling device. This behavior is caused by the interplay of the anisotropic density of states in (Ga,Mn)As with respect to the magnetization direction and the two-step magnetization reversal process in this material.

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PubMed2004

Semiclassical spin transport in spin-orbit-coupled bands.

Motivated by recent interest in novel spintronics effects, we develop a semiclassical theory of spin transport that is valid for spin-orbit coupled bands. Aside from the obvious convective term in which the average spin is transported at the wave packet group velocity, the spin current has additional contributions from the wave packet's spin and torque dipole moments. Electric field corrections to the group velocity and carrier spin contribute to the convective term. Summing all terms we obtain an expression for the intrinsic spin-Hall conductivity of a hole-doped semiconductor, which agrees with the Kubo formula prediction for the same quantity. We discuss the calculation of spin accumulation, which illustrates the importance of the torque dipole near the boundary of the system.

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PubMed2004

Universal intrinsic spin Hall effect.

We describe a new effect in semiconductor spintronics that leads to dissipationless spin currents in paramagnetic spin-orbit coupled systems. We argue that in a high-mobility two-dimensional electron system with substantial Rashba spin-orbit coupling, a spin current that flows perpendicular to the charge current is intrinsic. In the usual case where both spin-orbit split bands are occupied, the intrinsic spin-Hall conductivity has a universal value for zero quasiparticle spectral broadening.

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PubMed2004

First principles calculation of anomalous Hall conductivity in ferromagnetic bcc Fe.

We perform a first principles calculation of the anomalous Hall effect in ferromagnetic bcc Fe. Our theory identifies an intrinsic contribution to the anomalous Hall conductivity and relates it to the k-space Berry phase of occupied Bloch states. This dc conductivity has the same origin as the well-known magneto-optical effect, and our result accounts for experimental measurement on Fe crystals with no adjustable parameters.

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PubMed2002

Anomalous Hall effect in ferromagnetic semiconductors.

We present a theory of the anomalous Hall effect in ferromagnetic (III, Mn)V semiconductors. Our theory relates the anomalous Hall conductance of a homogeneous ferromagnet to the Berry phase acquired by a quasiparticle wave function upon traversing closed paths on the spin-split Fermi surface. The quantitative agreement between our theory and experimental data in both (In, Mn)As and (Ga, Mn)As systems suggests that this disorder independent contribution to the anomalous Hall conductivity dominates in diluted magnetic semiconductors. The success of this model for (III, Mn)V materials is unprecedented in the longstanding effort to understand origins of the anomalous Hall effect in itinerant ferromagnets.

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PubMed2001

Resistance spikes and domain wall loops in Ising quantum Hall ferromagnets.

We explain the recent observation of resistance spikes and hysteretic transport properties in Ising quantum Hall ferromagnets in terms of the unique physics of their domain walls. Self-consistent RPA/Hartree-Fock theory is applied to microscopically determine properties of the ground state and domain wall excitations. In these systems domain wall loops support one-dimensional electron systems with an effective mass comparable to the bare electron mass and may carry charge. Our theory is able to account quantitatively for the experimental Ising critical temperature and to explain qualitative characteristics of the resistive hysteresis loops.

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PubMed2000

Reorientation of anisotropy in a square well quantum hall sample.

We have measured magnetotransport at half-filled high Landau levels in a quantum well with two occupied electric subbands. We find resistivities that are isotropic in perpendicular magnetic field but become strongly anisotropic at nu = 9/2 and 11/2 on tilting the field. The anisotropy appears at an in-plane field, B(ip) approximately 2.5 T, with the easy-current direction parallel to B(ip) but rotates by 90 degrees at B(ip) approximately 10 T and points now in the same direction as in single-subband samples. This complex behavior is in quantitative agreement with theoretical calculations based on a unidirectional charge density wave state model.

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PubMed1976

[Effect of trenimon on single phases of the cell cycle of Yoshida ascites tumor cells (author's transl)].

Yoshida ascites tumor cells were synchronized in suspension cultures with thymidine in excess or with fluordeoxyuridine. Cells were washed after incubation with thymidine or treated with thymidine after incubation with fluordeoxyuridine. 2 h after terminating the S phase blockade 74--80% of the cells are S phase cells, 6 h later 70--80% of the cells had accumulated in the G 2 phase. Cultures enriched with cells of the S phase or the G 2 phase were treated with Trenimon. Increase of cell numbers within the following 48 h was inhibited in both cases in the same order of magnitude. In addition cells in various phases of growth were separated by density gradient zentrifugation and treated with Trenimon. Again cell numbers after 48 h were identical.

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