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T M Klapwijk

Publications and source records attributed to T M Klapwijk.

16 recordsLinked to original sources
PubMed2006

Antenna model for wire lasers.

An antenna model is proposed for long (L >> A) lasers with subwavelength cross sections (wire lasers). It is shown that the far-field pattern of the wire lasers is determined by the ratio of the wavelength to the length. The radiation of the wire laser is predicted to be concentrated in a narrow beam theta approximately radical(2lambda/L) for laser modes where the longitudinal phase velocity is in synchronism with the velocity of light in air. Experimental results obtained using a terahertz quantum cascade wire laser are in agreement with the model.

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PubMed2006

Critical voltage of a mesoscopic superconductor.

We study the influence of a voltage-driven nonequilibrium of quasiparticles on the properties of short mesoscopic superconducting wires. We employ a numerical calculation based upon the Usadel equation. Going beyond linear response, we find a nonthermal energy distribution of the quasiparticles caused by the applied bias voltage. It is demonstrated that this nonequilibrium drives the system from the superconducting state to the normal state, at a current density far below the critical depairing current density.

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PubMed2006

A spin triplet supercurrent through the half-metallic ferromagnet CrO2.

In general, conventional superconductivity should not occur in a ferromagnet, though it has been seen in iron under pressure. Moreover, theory predicts that the current is always carried by pairs of electrons in a spin singlet state, so conventional superconductivity decays very rapidly when in contact with a ferromagnet, which normally prohibits the existence of singlet pairs. It has been predicted that this rapid spatial decay would not occur if spin triplet superconductivity could be induced in the ferromagnet. Here we report a Josephson supercurrent through the strong ferromagnet CrO2, from which we infer that it is a spin triplet supercurrent. Our experimental set-up is different from those envisaged in the earlier predictions, but we conclude that the underlying physical explanation for our result is a conversion from spin singlet pairs to spin triplets at the interface. The supercurrent can be switched with the direction of the magnetization, analogous to spin valve transistors, and therefore could enable magnetization-controlled Josephson junctions.

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PubMed2006

Magnetization of a strongly interacting two-dimensional electron system in perpendicular magnetic fields.

We measure the thermodynamic magnetization of a low-disordered, strongly correlated two-dimensional electron system in silicon in perpendicular magnetic fields. A new, parameter-free method is used to directly determine the spectrum characteristics (Landé g factor and the cyclotron mass) when the Fermi level lies outside the spectral gaps and the interlevel interactions between quasiparticles are avoided. Intralevel interactions are found to strongly modify the magnetization, without affecting the determined g* and m*.

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PubMed2005

Experimental observation of bias-dependent nonlocal Andreev reflection.

We investigate transport through hybrid structures consisting of two normal metal leads connected via tunnel barriers to one common superconducting electrode. We find clear evidence for the occurrence of nonlocal Andreev reflection and elastic cotunneling through a superconductor when the separation of the tunnel barrier is comparable to the superconducting coherence length. The probability of the two processes is energy dependent, with elastic cotunneling dominating at low energy and nonlocal Andreev reflection at higher energies. The energy scale of the crossover is found to be the Thouless energy of the superconductor, which indicates the phase coherence of the processes. Our results are relevant for the realization of recently proposed entangler devices.

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PubMed2005

Universal spin-induced time reversal symmetry breaking in two-dimensional electron gases with Rashba spin-orbit interaction.

We have experimentally studied the spin-induced time reversal symmetry (TRS) breaking as a function of the relative strength of the Zeeman energy (E(Z)) and the Rashba spin-orbit interaction energy (E(SOI)), in InGaAs-based 2D electron gases. We find that the TRS breaking, and hence the associated dephasing time tau(phi)(B), saturates when E(Z) becomes comparable to E(SOI). Moreover, we show that the spin-induced TRS breaking mechanism is a universal function of the ratio E(Z)/E(SOI), within the experimental accuracy.

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PubMed2004

Magnetic-field dependence of the anomalous noise behavior in a two-dimensional electron system in silicon.

Studies of low-frequency resistance noise show that the dramatic change in the dynamics of the two-dimensional electron system (2DES) in Si that occurs near the metal-insulator transition (MIT) persists in high parallel magnetic fields B such that the 2DES is fully spin polarized. This strongly suggests that charge, as opposed to spin, degrees of freedom are responsible for this effect. In the metallic phase, however, noise is suppressed by a parallel B, pointing to the role of spins. At low B, the temperature dependence of conductivity in the metallic phase provides evidence for a MIT.

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PubMed2003

Solution-processed ambipolar organic field-effect transistors and inverters.

There is ample evidence that organic field-effect transistors have reached a stage where they can be industrialized, analogous to standard metal oxide semiconductor (MOS) transistors. Monocrystalline silicon technology is largely based on complementary MOS (CMOS) structures that use both n-type and p-type transistor channels. This complementary technology has enabled the construction of digital circuits, which operate with a high robustness, low power dissipation and a good noise margin. For the design of efficient organic integrated circuits, there is an urgent need for complementary technology, where both n-type and p-type transistor operation is realized in a single layer, while maintaining the attractiveness of easy solution processing. We demonstrate, by using solution-processed field-effect transistors, that hole transport and electron transport are both generic properties of organic semiconductors. This ambipolar transport is observed in polymers based on interpenetrating networks as well as in narrow bandgap organic semiconductors. We combine the organic ambipolar transistors into functional CMOS-like inverters.

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PubMed2003

Coherent backscattering near the two-dimensional metal-insulator transition.

We have studied corrections to conductivity due to the coherent backscattering in low-disordered two-dimensional electron systems in silicon for a range of electron densities including the vicinity of the metal-insulator transition, where the dramatic increase of the spin susceptibility has been observed earlier. We show that the corrections, which exist deeper in the metallic phase, weaken upon approaching the transition and practically vanish at the critical density, thus suggesting that the localization is suppressed near and at the transition even in zero field.

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PubMed2003

Spin-independent origin of the strongly enhanced effective mass in a dilute 2D electron system.

We accurately measure the effective mass in a dilute two-dimensional electron system in silicon by analyzing the temperature dependence of the Shubnikov-de Haas oscillations in the low-temperature limit. A sharp increase of the effective mass with decreasing electron density is observed. We find that the enhanced effective mass is independent of the degree of spin polarization, which points to a spin-independent origin of the mass enhancement and is in contradiction with existing theories.

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PubMed2002

Universal behavior of the resistance noise across the metal-insulator transition in silicon inversion layers.

Studies of low-frequency resistance noise show that the glassy freezing of the two-dimensional (2D) electron system in the vicinity of the metal-insulator transition occurs in all Si inversion layers. The size of the metallic glass phase, which separates the 2D metal and the (glassy) insulator, depends strongly on disorder, becoming extremely small in high-mobility samples. The behavior of the second spectrum, an important fourth-order noise statistic, indicates the presence of long-range correlations between fluctuators in the glassy phase, consistent with the hierarchical picture of glassy dynamics.

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PubMed2002

Direct observation of the transition from the conventional superconducting state to the pi state in a controllable Josephson junction.

We measure the full supercurrent-phase relation of a controllable pi junction around the transition from the conventional 0 state to the pi state. We show that around the transition the Josephson supercurrent-phase relation changes from I(sc) approximately I(c)sin((phi) to I(sc) approximately I(c)sin((2phi). This implies that, around the transition, two minima in the junction free energy exist, one at phi=0 and one at phi=pi, whereas only one minimum exists at the 0 state (at phi=0) and at the pi state (at phi=pi). Theoretical calculations based on the quasiclassical theory are in good agreement with the observed behavior.

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PubMed2001

Metal-insulator transition in a 2D electron gas: equivalence of two approaches for determining the critical point.

The critical electron density for the metal-insulator transition in a two-dimensional electron gas can be determined by two distinct methods: (i) a sign change of the temperature derivative of the resistance, and (ii) vanishing activation energy and vanishing nonlinearity of current-voltage characteristics as extrapolated from the insulating side. We find that, in zero magnetic field (but not in the presence of a parallel magnetic field), both methods give equivalent results, adding support to the existence of a true zero-field metal-insulator transition.

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PubMed2001

Scaling of the magnetoconductivity of silicon MOSFETs: evidence for a quantum phase transition in two dimensions.

For a broad range of electron densities n and temperatures T, the in-plane magnetoconductivity of the two-dimensional system of electrons in silicon MOSFETs can be scaled onto a universal curve with a single parameter H(sigma)(n,T), where H(sigma) obeys the empirical relation H(sigma) = A(n) [Delta(n)(2)+T2](1/2). The characteristic energy k(B)Delta associated with the magnetic field dependence of the conductivity decreases with decreasing density, and extrapolates to 0 at a critical density n(0), signaling the approach to a zero-temperature quantum phase transition. We show that H(sigma) = AT for densities near n(0).

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PubMed2001

Indication of the ferromagnetic instability in a dilute two-dimensional electron system.

The magnetic field B(c), in which the electrons become fully spin polarized, is found to be proportional to the deviation of the electron density from the zero-field metal-insulator transition in a two-dimensional electron system in silicon. The tendency of B(c) to vanish at a finite electron density suggests a ferromagnetic instability in this strongly correlated electron system.

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