Influence of electronic parameters on the electric-field gradients induced by H at the probe atom 111In/111Cd in Si.
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Biomedical subjects
T Wichert
Publications and source records attributed to T Wichert.
H passivation of shallow acceptors in Si studied by use of the perturbed- gamma gamma -angular-correlation technique.
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Passivation of shallow acceptors by H in Si: A microscopic study by perturbed angular correlations.
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Formation of In-As complexes in silicon observed by the perturbed-angular-correlation technique.
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Migration of helium atoms in copper at 25 K.
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