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Takuji Takahashi

Publications and source records attributed to Takuji Takahashi.

4 recordsLinked to original sources

Tip-to-sample distance dependence of an electrostatic force in KFM measurements.

In most scanning probe methods like an atomic force microscopy, a cantilever is mechanically vibrated in order to obtain topographies. Therefore, a tip-to-sample distance periodically changes during the scanning. Since the electrostatic force, which is a long-range force, is used for potential feedback in Kelvin probe force microscopy (KFM), such mechanical vibration leads to the fluctuation of the electrostatic force between the tip and the sample. In this study, firstly, we performed two-dimensional simulations of the electric fields between surfaces of the tip and the sample and evaluated the tip-to-sample distance dependence of the electrostatic force. Secondly, we experimentally confirmed the existence of the fluctuation of the electrostatic force and the tip-to-sample distance dependence of the electrostatic force was evaluated. Both the simulations and the experiments on the tip-to-sample distance dependence showed the importance of considering the tip sidewall effect in the KFM potential determination.

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Magnetic field detection for current evaluation by magnetic force microscopy.

A current measurement method through magnetic field detection by magnetic force microscopy was proposed and demonstrated. We observed the magnetic field induced by an AC below 2.2 microA around a GaAs/AlGaAs mesa stripe. To achieve high sensitivity in magnetic field detection, we tuned the AC bias frequency to the torsional resonant frequency of the cantilever. As a result, the sensitivity of the magnetic field detection was much improved and specific features of the magnetic field around the mesa stripe were clearly observed at a current in sub-microA range.

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Current and potential characterization on InAs nanowires by contact-mode atomic force microscopy and Kelvin probe force microscopy.

We fabricated InAs nanowires on GaAs giant step structures, and studied their surfaces by two methods; one was current detection by contact-mode atomic force microscopy, and the other was surface potential measurement by Kelvin probe force microscopy (KFM). In the current detection method, the regions where the large current flowed were distributed along the step edges, and these regions agreed well with the expected distribution of InAs. This result confirms that the InAs nanowires were formed along the GaAs giant step edges. The KFM measurements showed that the potential value became more negative along each step edge, where the InAs nanowire was expected to be formed. The surface potential of the InAs nanowires is more negative than that of the surrounding GaAs, which may result from the electron accumulation in the InAs nanowires.

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Light-illuminated STM studies on photo-absorption in InAs nanowires.

We fabricated surface InAs nanowires along GaAs giant step structures on GaAs (110) vicinal substrates, and their photo-absorption properties were studied by scanning tunneling microscopy (STM) under light illumination. In photo-induced current detection, it was difficult to identify the photo-absorption signals in the InAs nanowires because of the electrical isolation of the surface nanostructures from the conductive substrate. On the other hand, optical response measurements of differential conductance under small AC bias modulation in STM enabled us to obtain the photo-absorption signals from the surface nanostructures with avoiding such an electrical isolation problem. We successfully observed optical response images of differential conductance with a clear contrast between InAs nanowires and surrounding GaAs region by the appropriate tuning of the illuminating photon energy to excite the InAs nanowires selectively.

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