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U Woggon

Publications and source records attributed to U Woggon.

13 recordsLinked to original sources

Recombination dynamics of CdTe/CdS core-shell nanocrystals.

The recombination dynamics of zinc-blende-type, deep-red emitting CdTe/CdS core-shell nanocrystals is studied over a wide temperature range. Two characteristic decay regimes are found: a temperature-dependent decay component of a few nanoseconds and a long-living temperature-independent component of approximately 315 ns. The average decay time of the exciton states changes from 20 to 5ns when the temperature is increased from 15 to 295 K. At low temperatures, the observed decay behavior is assigned to thermally induced population and decay of the allowed exchange-split exciton states. At temperatures above T>100 K, nonradiative decay channels involving phonons start to contribute to the exciton recombination. The observed broad distribution in decay times, monitored by stretched exponential fitting functions, we explain by variations in the electron-hole overlap caused by a partly incomplete CdTe/CdS core-shell structure and the nearly energy-degenerated bright and dark state superposition.

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Cavity QED with semiconductor nanocrystals.

We report on a strongly coupled cavity quantum electrodynamic (CQED) system consisting of a CdSe nanocrystal coupled to a single photon mode of a polymer microsphere. The strong exciton-photon coupling is manifested by the observation of a cavity mode splitting variant Planck's over 2piOmega(exp) between 30 und 45 microeV and photon lifetime measurements of the coupled exciton-photon state. The single photon mode is isolated by lifting the mode degeneracy in a slightly deformed microsphere cavity and addressing it by high-resolution imaging spectroscopy. This cavity mode is coupled to a localized exciton of an anisotropically shaped CdSe nanocrystal that emits highly polarized light in resonance to the cavity mode and that was placed in the maximum electromagnetic field close to the microsphere surface. The exciton confined in the CdSe nanorod exhibits an optical transition dipole moment much larger than that of atoms, the standard system for CQED experiments, and a low-temperature homogeneous line width much narrower than the high-Q cavity mode width. The observation of strong coupling in a colloidal semiconductor nanocrystal-cavity system opens the way to study fundamental quantum-optics phenomena and to implement quantum information processing concepts that work in the visible spectral range and are based on solid-state nanomaterials.

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Coherent control and polarization readout of individual excitonic states.

We present measurements and simulations of coherent control and readout of the polarization in individual exciton states. The readout is accomplished by transient four-wave mixing detected by heterodyne spectral interferometry. We observe Rabi oscillations in the polarization, which show half the period of the Rabi oscillations in the population. A decrease of the oscillation amplitude with pulse area is observed, which is not accompanied by a change in the dephasing time. This suggests the transfer of the excitation to other states as the origin of the Rabi-oscillation damping. Detuning of the excitation enables the control of the polarization in phase and amplitude and is in qualitative agreement with simulations for a two-level system. Additionally, simultaneous Rabi flopping of several spatially and energetically close exciton states is demonstrated.

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Exciton fine structure in single CdSe nanorods.

We study the optical properties of excitons in one-dimensional (1D) nanostructures at low temperatures. In single CdSe/ZnS core-shell nanorods we observe a fine structure splitting and explain it by exchange interaction. Two peaks are observed with different degrees of linear polarization of DLP<0.85 and DLP>0.95. For small nanorod radii R< or =a(B)/2, an increase in the photoluminescence decay time is found when the temperature increases from 10 to 80 K. The observations are explained by a radius-dependent change in the symmetry of the 1D-exciton ground state which transforms from a dark state into bright states below a critical radius of R(crit) approximately 3.7 nm.

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Hybrid epitaxial-colloidal semiconductor nanostructures.

We present a growth technique which combines wet-chemical growth and molecular beam epitaxy (MBE) to create complex semiconductor nanostructures with nanocrystals as active optical material. The obtained results show that wet-chemically prepared semiconductor nanocrystals can be incorporated in an epitaxally grown crystalline cap layer. As an exemplary system we chose CdSe nanorods and CdSe(ZnS) core-shell nanocrystals in ZnSe and discuss the two limits of thin (d approximately 2R) and thick (d>2R) ZnSe cap layers of thickness d for CdSe nanorods and nanodots of radii R between 2 and 4 nm. In contrast to the strain-induced CdSe/ZnSe Stranski-Krastanow growth of a quantum dot layer in a semiconductor heterostructure, the technique proposed here does not rely on strain and thus results in additional degrees of freedom for choosing composition, concentration, shape, and size of the nanocrystals. Transmission electron microscopy and X-ray diffractometry show that the ZnSe cap layer is of high crystalline quality and provides all parameters for a consecutive growth of Bragg structures, waveguides, or diode structures for electrical injection.

Cadmium Compounds↗

Exciton dephasing in quantum dot molecules.

We have measured the exciton dephasing time in InAs/GaAs quantum dot molecules having different interdot barrier thicknesses in the temperature range from 5 to 60 K, using a highly sensitive four-wave mixing heterodyne technique. At 5 K dephasing times of several hundred picoseconds are found. Moreover, a systematic dependence of the dephasing dynamics on the barrier thickness is observed. These results show how the quantum-mechanical coupling of the electronic wave functions in the molecules affects both the exciton radiative lifetime and the exciton-acoustic phonon interaction.

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Relaxation and dephasing of multiexcitons in semiconductor quantum dots.

We measure the dephasing time of ground-state excitonic transitions in InGaAs quantum dots under electrical injection in the temperature range from 10 to 70 K. Electrical injection into the barrier region results in a pure dephasing of the excitonic transitions. Once the injected carriers fill the electronic ground state, the biexciton to exciton transition is probed and a correlation of the exciton and biexciton phonon scattering mechanisms is found. Additional filling of the excited states creates multiexcitons that show a fast dephasing due to population relaxation.

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Ultralong dephasing time in InGaAs quantum dots.

We measure a dephasing time of several hundred picoseconds at low temperature in the ground-state transition of strongly confined InGaAs quantum dots, using a highly sensitive four-wave mixing technique. Between 7 and 100 K the polarization decay has two distinct components resulting in a non-Lorentzian line shape with a lifetime-limited zero-phonon line and a broadband from elastic exciton-acoustic phonon interactions.

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