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Uwe Griebner

Publications and source records attributed to Uwe Griebner.

6 recordsLinked to original sources

Characteristics of a continuous-wave Yb:GdVO4 laser end pumped by a high-power diode.

An efficient and compact diode-pumped continuous-wave Yb:GdVO4 laser is demonstrated, generating an output power of 4.0 W with an optical conversion efficiency of 61% and a slope efficiency as high as 78%. With increasing pump power the polarization of the laser output changes from sigma to pi, while in a certain intermediate power range the two polarization states coexist with different emission wavelengths.

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Yb-doped KY(WO4)2 planar waveguide laser.

High-quality monoclinic KY(WO4)2 optical waveguides were grown by liquid-phase epitaxy, and laser operation of an Yb-doped KY(WO4)2 waveguide was demonstrated for the first time to our knowledge. Continuous-wave laser emission near 1 microm was achieved with both surface and buried planar waveguides. An output power of 290 mW was obtained in the fundamental mode and the slope efficiency was above 80%.

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Continuous-wave laser operation of Yb:LuVO4.

We report on the room-temperature spectroscopic properties and continuous-wave laser operation of a new Yb:LuVO4 crystal. The peak absorption cross section for the pi-polarization is 8.42 x 10(-20) cm2 at 985 nm, and the stimulated emission cross section at 1020 nm is 1.03 x 10(-20) cm2. An output power of 0.36 W at 1041 nm was obtained with a slope efficiency of 47% by use of Ti:sapphire laser pumping. With diode pumping the output power reached 1.05 W at the highest available incident pump power of 6.8 W.

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Efficient continuous-wave and Q-switched operation of a diode-pumped Yb:KLu(WO4)2 laser with self-Raman conversion.

Efficient cw and passively Q-switched operation with self-stimulated Raman scattering conversion was demonstrated in a compact diode-pumped Yb:KLu(WO4)2 laser. A cw output power of 3.28 W was obtained with an optical efficiency of 48.2% and a slope efficiency of 78.2% with respect to the incident pump power. Stable Q-switched operation was achieved with a Cr4+:YAG saturable absorber, generating 32.4 microJ fundamental pulses with a duration of 1.41 ns at 1030.6 nm and 14.4 microJ Raman pulses with a duration of 0.71 ns at 1137.6 nm. At an incident pump power of 7.0 W, the average output power reached 0.9 and 0.4 W for fundamental and Raman radiation, with slope efficiencies of 32.1% and 14.1%, respectively.

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Mode-locked laser operation of epitaxially grown Yb:Klu(WO4)2 composites.

Mode locking based on an epitaxial composite of the monoclinic double tungstate crystal Yb:KLu(WO4)2 is realized. A 100 microm thin Yb:KLu(WO4)2 layer grown on a KLu(WO4)2 substrate is used as an active medium in a laser passively mode locked by a semiconductor saturable absorber. Pulse durations of 114 fs have been achieved for an average power of 31 mW at 1030 nm. Results in the femtosecond and picosecond regimes of the Yb:KLu(WO4)2/KLu(WO4)2 laser are presented. The great potential of Yb-doped tungstate composite structures as active elements for mode-locked laser systems is demonstrated.

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Highly efficient mode-locked Yb:Sc2O3 laser.

Passive mode locking of the Yb:Sc2O3 laser is demonstrated. We investigate the laser performance with Ti:sapphire and diode-laser pumping. The laser is mode locked by use of a semiconductor saturable-absorber mirror and emits as much as 0.8 W of power in the picosecond range with a pump efficiency as high as 47%. With dispersion compensation, pulses as short as 230 fs for an average power of 0.54 W are obtained at 1044 nm. This is, to our knowledge, the first femtosecond oscillator based on an Yb-doped sesquioxide crystal.

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