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VV Bulatov

Publications and source records attributed to VV Bulatov.

4 recordsLinked to original sources
PubMed2000

Intrinsic mobility of a dissociated dislocation in silicon

Dislocation velocities in silicon in the experimental range of temperature and stress are studied a priori by combining a mechanistic treatment of elementary kink processes with activation energies obtained by atomistic calculations. Pronounced effects of intrinsic coupling of the dissociated partial dislocations are captured in kinetic Monte Carlo simulations, which are consistent with observed velocity variations with applied stress. As a result, the nature of "weak obstacles" to kink propagation, a long-standing postulate in previous data interpretation, is clarified. A striking new effect is predicted and offered for experimental verification when dislocation velocity shows nonmonotonic oscillatory behavior with increasing stress.

Journal Article↗
PubMed2000

Vacancy interaction with dislocations in silicon: the shuffle-glide competition

Competition between the two alternative positions (shuffle and glide 111 plane subsets) for the core of a 30 degrees partial dislocation in Si is examined. Using a combination of ab initio total energy calculations with finite temperature free-energy calculations based on an interatomic potential, we obtained free energies for the relevant vacancy-type core defects. Generally, the free energy of vacancy formation in the core of a 30 degrees glide partial dislocation is considerably lower (by more than 1 eV) than in the bulk. However, even at high temperatures, the predicted thermal concentration of the shuffle segments comprised of a row of vacancies in the core is low, placing the 30 degrees partial dislocation in the glide subset position.

Journal Article↗