Comment on "Gold, self-, and dopant diffusion in silicon"
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Biomedical subjects
Van Vechten JA
Publications and source records attributed to Van Vechten JA.
Entropy of migration for atomic hopping.
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Reply to "Comment on 'Atomic model for the EL2 defect in GaAs"
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Reply to "Comment on 'Atomic model for the EL2 defect in GaAs"
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Activation enthalpy of recombination-enhanced vacancy migration in Si.
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First-overtone response in modulated photoluminescence emission in silicon at room temperature.
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Structure of laser-pulse-plasma-induced carbon clusters: Explanation of the magic numbers.
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Mobility enhancement of modulation-doped materials by low-temperature optical annealing of spacer-layer defect charge state.
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Atomic model for the EL2 defect in GaAs.
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Vacancies, dislocations, and carbon interstitials in Si.
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Comment on "Green's-function calculation of the lattice response near the vacancy in Si."
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Divacancy binding enthalpy and contribution of divacancies to self-diffusion in Si.
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Atomic model for the M center in InP.
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Asymmetry of anion and cation vacancy migration enthalpies in III-V compound semiconductors: Role of the kinetic energy.
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Temperature dependence of transverse acoustic phonons in semiconductors.
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