Biomedical subjects

W N Kang

Publications and source records attributed to W N Kang.

6 recordsLinked to original sources

PubMed2003

Pair-breaking and superconducting state recovery dynamics in MgB2.

We present studies of the photoexcited quasiparticle dynamics in MgB2 where, using femtosecond optical techniques, Cooper pair-breaking dynamics (PBD) have been temporally resolved for the first time. The PBD are strongly temperature and photoexcitation intensity dependent. Analysis of the PBD using the Rothwarf-Taylor equations suggests that the anomalous PBD arises from the fact that in MgB2 photoexcitation is initially followed by energy relaxation to high frequency phonons instead of, as commonly assumed, e-e thermalization. Furthermore, the bare quasiparticle recombination rate and the probability for pair breaking by phonons have been determined.

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PubMed2003

Anomalous coherence peak in the microwave conductivity of c-axis oriented MgB2 thin films.

The temperature dependence of the real part of the microwave complex conductivity at 17.9 GHz obtained from surface impedance measurements of two c-axis oriented MgB2 thin films reveals a pronounced maximum at a temperature around 0.6 times the critical temperature. Calculations in the frame of a two-band model based on Bardeen-Cooper-Schrieffer (BCS) theory suggest that this maximum corresponds to an anomalous coherence peak resembling the two-gap nature of MgB2. Our model assumes there is no interband impurity scattering and a weak interband pairing interaction, as suggested by band structure calculations. In addition, the observation of a coherence peak indicates that the pi band is in the dirty limit and dominates the total conductivity of our films.

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PubMed2002

Two-band superconductivity in MgB2.

The study of the anisotropic superconductor MgB2 using a combination of scanning tunneling microscopy and spectroscopy reveals two distinct energy gaps at Delta(1)=2.3 meV and Delta(2)=7.1 meV at 4.2 K. Different spectral weights of the partial superconducting density of states are a reflection of different tunneling directions in this multiband system. Temperature evolution of the tunneling spectra follows the BCS scenario [Phys. Rev. Lett. 3, 552 (1959)]] with both gaps vanishing at the bulk T(c). The data confirm the importance of Fermi-surface sheet dependent superconductivity in MgB2 proposed in the multigap model by Liu et al. [Phys. Rev. Lett. 87, 087005 (2001)]].

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PubMed2001

Optical properties of c-axis oriented superconducting MgB2 films.

Temperature dependent optical conductivities and dc resistivity of c-axis oriented superconducting (T(c) = 39.6 K) MgB2 films (approximately 450 nm) have been measured. The normal state ab-plane optical conductivities can be described by the Drude model with a temperature independent Drude plasma frequency of omega(p,D) = 13 600+/-100 cm(-1) or 1.68+/-0.01 eV. The normal state resistivity is fitted by the Bloch-Grüneisen formula with an electron-phonon coupling constant lambda(tr) = 0.13+/-0.02. The optical conductivity spectra below T(c) of these films suggest that MgB2 is a multigap superconductor.

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PubMed2001

High current-carrying capability in c-axis-oriented superconducting MgB2 thin films.

In high-quality c-axis-oriented MgB2 thin films, we observed high critical current densities ( J(c)) of approximately 16 MA/cm(2) at 15 K under self-fields comparable to those of cuprate high-temperature superconductors. The extrapolated value of J(c) at 5 K was estimated to be approximately 40 MA/cm(2). For a magnetic field of 5 T, a J(c) of approximately 0.1 MA/cm(2) was detected at 15 K, suggesting that this compound would be a very promising candidate for practical applications at high temperature and lower power consumption. The vortex-glass phase is considered to be a possible explanation for the observed high current-carrying capability.

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PubMed2001

MgB2 superconducting thin films with a transition temperature of 39 kelvin.

We fabricated high-quality c axis-oriented epitaxial MgB2 thin films using a pulsed laser deposition technique. The thin films grown on (1 i 0 2) Al2O3 substrates have a transition temperature of 39 kelvin. The critical current density in zero field is approximately 6 x 10(6) amperes per cubic centimeter at 5 kelvin and approximately 3 x 10(5) amperes per cubic centimeter at 35 kelvin, which suggests that this compound has potential for electronic device applications, such as microwave devices and superconducting quantum interference devices. For the films deposited on Al2O3, x-ray diffraction patterns indicate a highly c axis-oriented crystal structure perpendicular to the substrate surface.

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