Dependence of transition-metal impurity levels on host composition in III-V semiconductors.
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Biomedical subjects
W Walukiewicz
Publications and source records attributed to W Walukiewicz.
Chadi, Chang, and Walukiewicz reply.
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Doping-induced suppression of dislocation formation in semiconductors.
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Unification of the properties of the EL2 defect in GaAs.
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Comment on volume relaxation around defects in silicon upon electron emission.
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Acoustic-phonon scattering in modulation-doped heterostructures.
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Mechanism of Fermi-level stabilization in semiconductors.
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Critical criterion for axial models of defects in as-grown n-type GaAs.
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Deep-level defects in silicon and the band-edge hydrostatic deformation potentials.
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Band-edge hydrostatic deformation potentials in III-V semiconductors.
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Response to "Comment on 'Electron mobility in modulation-doped heterostructures' "
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Hole mobility in modulation-doped heterostructures: GaAs-AlGaAs.
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Erratum: Electron mobility in modulation-doped heterostructures
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