Identification of Grown-In Efficient Nonradiative Recombination Centers in Molecular Beam Epitaxial Silicon.
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Biomedical subjects
WM Chen
Publications and source records attributed to WM Chen.
Intrinsic Doping: A New Approach for n-Type Modulation Doping in InP-Based Heterostructures.
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Determination of the electron effective-mass tensor in 4H SiC.
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Photoluminescence of the two-dimensional hole gas in p-type delta -doped Si layers.
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Fermi-edge singularity in p-type modulation-doped SiGe quantum wells.
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Optically detected cyclotron-resonance studies of radiative processes in AlxGa1-xAs/GaAs high-electron-mobility structures.
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Effect of ion bombardment on deep photoluminescence bands in p-type boron-modulation-doped Si layers grown by molecular-beam epitaxy.
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Transfer mechanism between pseudodonor excited singlet and triplet states of the S-Cu complex defect in silicon.
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Optically detected magnetic-resonance study of a metastable selenium-related center in silicon.
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Direct determination of the electron-electron-hole Auger threshold energy in silicon.
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S-Cu-related metastable complex defect in Si by optical detection of magnetic resonance.
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Observation of rapid direct charge transfer between deep defects in silicon.
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Metastable chalcogen-related luminescent centers in silicon.
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Mechanism of the configurational change of metastable defects in silicon.
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Phosphorus antisite defects in low-temperature InP.
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Zero-field optical detection of magnetic resonance on a metastable sulfur-pair-related defect in silicon: Evidence for a Cu constituent.
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Optical investigation of Fermi-edge singularities in Al0.35Ga0.65As/GaAs heterostructures.
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