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William E Buhro

Publications and source records attributed to William E Buhro.

5 recordsLinked to original sources
PubMed2006

Solution-liquid-solid growth of semiconductor nanowires.

The serendipitously discovered solution-liquid-solid (SLS) mechanism has been refined into a nearly general synthetic method for semiconductor nanowires. Purposeful control of diameters and diameter distributions is achieved. The synthesis proceeds by a solution-based catalyzed-growth mechanism in which nanometer-scale metallic droplets catalyze the decomposition of metallo-organic precursors and crystalline nanowire growth. Related growth methods proceeding by the analogous vapor-liquid-solid (VLS) and supercritical fluid-liquid-solid (SFLS) mechanisms are known, and the relative attributes of the methods are compared. In short, the VLS method is most general and appears to afford nanowires of the best crystalline quality. The SLS method appears to be advantageous for producing the smallest nanowire diameters and for variation and control of surface ligation. The SFLS method may represent an ideal compromise. Recent results for SLS growth are summarized.

Journal Article↗
PubMed2003

Cadmium selenide quantum wires and the transition from 3D to 2D confinement.

Soluble CdSe quantum wires are prepared by the solution-liquid-solid mechanism, using monodisperse bismith nanoparticles to catalyze wire growth. The quantum wires have micrometer lengths, diameters in the range of 5-20 nm, and diameter distributions of +/-10-20%. Spectroscopically determined wire band gaps compare closely to those calculated by the semiemipirical pseudopotential method, confirming 2D quantum confinement. The diameter dependence of the quantum wire band gaps is compared to that of CdSe quantum dots and rods. Quantum rod band gaps are shown to be delimited by the band gaps of dots and wires of like diameter, for short and long rods, respectively. The experimental data suggest that a length of ca. 30 nm is required for the third dimension of quantum confinement to fully vanish in CdSe rods. That length is about six times the bulk CdSe exciton Bohr radius.

Journal Article↗
PubMed2003

Two- versus three-dimensional quantum confinement in indium phosphide wires and dots.

The size dependence of the bandgap is the most identifiable aspect of quantum confinement in semiconductors; the bandgap increases as the nanostructure size decreases. The bandgaps in one-dimensional (1D)-confined wells, 2D-confined wires, and 3D-confined dots should evolve differently with size as a result of the differing dimensionality of confinement. However, no systematic experimental comparisons of analogous 1D, 2D or 3D confinement systems have been made. Here we report growth of indium phosphide (InP) quantum wires having diameters in the strong-confinement regime, and a comparison of their bandgaps with those previously reported for InP quantum dots. We provide theoretical evidence to establish that the quantum confinement observed in the InP wires is weakened to the expected extent, relative to that in InP dots, by the loss of one confinement dimension. Quantum wires sometimes behave as strings of quantum dots, and we propose an analysis to generally distinguish quantum-wire from quantum-dot behaviour.

Crystallization↗
PubMed2002

Crystalline boron nanowires.

Ideal nanowire interconnects for nanoelectronics will be refractory, covalently bonded, and highly conductive, irrespective of crystallographic orientation. Theoretical studies suggest that boron nanotubes should be stable and exhibit higher electrical conductivities than those of carbon nanotubes. We describe CVD growth of elemental boron nanowires, which are found to be dense nanowhiskers rather than nanotubes. Conductivity measurements establish that they are semiconducting, with electrical properties consistent with those of elemental boron. High conductivities should be achievable through doping.

Journal Article↗