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Xiao-Jun Gu

Publications and source records attributed to Xiao-Jun Gu.

2 recordsLinked to original sources

Capturing Knudsen layer phenomena using a lattice Boltzmann model.

In recent years, lattice Boltzmann methods have been increasingly used to simulate rarefied gas flows in microscale and nanoscale devices. This is partly due to the fact that the method is computationally efficient, particularly when compared to solution techniques such as the direct simulation Monte Carlo approach. However, lattice Boltzmann models developed for rarefied gas flows have difficulty in capturing the nonlinear relationship between the shear stress and strain rate within the Knudsen layer. As a consequence, these models are equivalent to slip-flow solutions of the Navier-Stokes equations. In this paper, we propose an effective mean-free path to address the Knudsen layer effect, so that the capabilities of lattice Boltzmann methods can be extended beyond the slip-flow regime. The model has been applied to rarefied shear-driven and pressure-driven flows between parallel plates at Knudsen numbers between 0.01 and 1. Our results show that the proposed approach significantly improves the near-wall accuracy of the lattice Boltzmann method and provides a computationally economic solution technique over a wide range of Knudsen numbers.

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An analysis of induced pressure fields in electroosmotic flows through microchannels.

Induced pressure gradients are found to cause band-broadening effects which are important to the performance of microfluidic devices, such as capillary electrophoresis and capillary chromatography. An improved understanding of the underlying mechanisms causing an induced pressure gradient in electroosmotic flows is presented. The analysis shows that the induced pressure distribution is the key to understanding the experimentally observed phenomena of leakage flows. A novel way of determining the static pressures at the inlet and outlet of microchannels is also presented that takes account of the pressure losses due to flow contraction and expansion. These commonly neglected pressure losses at the channel entrance and outlet are shown to be important in accurately describing the flow. The important parameters that define the effect of induced pressure on the flows are discussed, which may facilitate the design of improved microfluidic devices. The present model clearly identifies the mechanism behind the experimentally observed leakage flows, which is further confirmed by numerical simulations. Not only can the leakage flow occur from the electric-field-free side channel to the main channel, but also the fluid in the main channel can be attracted into the side channel by the induced pressure gradient.

Journal Article↗