Background removal in surface electron spectroscopy: Influence of surface excitations.
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Biomedical subjects
YF Chen
Publications and source records attributed to YF Chen.
Observation of spin-splitting crossing between subbands in the optically detected cyclotron-resonance spectra of In0.53Ga0.47As/In0.52Al0.48As heterojunctions.
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Cyclotron-resonance studies in relaxed InxGa1-xAs (0 <= x <= 1) epilayers.
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Influence of surface excitations on electrons elastically backscattered from copper and silver surfaces.
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Raman-line-shape study of InxGa1-xAs on InP and GaAs substrates.
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Substitution of Ga for Cu in RBa2Cu3-xGaxO7-y systems (R=Yb, Er, Y, Dy, Gd, Eu, and Nd).
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Differential cross sections for plasmon excitations and reflected electron-energy-loss spectra.
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Photoluminescence-excitation-correlation spectroscopic study of a high-density two-dimensional electron gas in GaAs/Al0.3Ga0.7As modulation-doped quantum wells.
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Light-induced degradation on porous silicon.
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Optical-constants model for semiconductors and insulators.
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Analytic functions for atomic momentum-density distributions and Compton profiles of K and L shells.
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Fermi enhancement and breakdown of the parity selection rule in the luminescence spectra of GaAs/AlxGa1-xAs modulation-doped quantum wells.
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Magnetophotoconductivity studies of D0 and D- centers in GaAs quantum wells in metallic and insulating states.
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Reconstruction of the sum-rule-constrained classical binary-collision model for inner-shell ionizations.
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Kinetics of optically generated defects in hydrogenated amorphous silicon.
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Connection between the Meyer-Neldel rule and stretched-exponential relaxation.
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Erratum: Stretched-exponential law for carrier capture kinetics of a trapping center in compensated amorphous silicon
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Stretched-exponential law for carrier capture kinetics of a trapping center in compensated amorphous silicon.
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