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Youji Inoue

Publications and source records attributed to Youji Inoue.

4 recordsLinked to original sources
PubMed2005

n-type organic field-effect transistors with very high electron mobility based on thiazole oligomers with trifluoromethylphenyl groups.

Novel thiazole oligomers and thiazole/thiophene co-oligomers with trifluoromethylphenyl groups were developed as n-type semiconductors for OFETs. They showed excellent n-type performances with high electron mobilities. A 5,5'-bithiazole with trifluoromethylphenyl groups forms a closely packed two-dimensional columnar structure leading to a high performance n-type FET. The electron mobility was enhanced to 1.83 cm2/Vs on the OTS-treated substrate.

Journal Article↗
PubMed2005

High performance n-type organic field-effect transistors based on pi-electronic systems with trifluoromethylphenyl groups.

Novel pi-electron systems with trifluoromethylphenyl groups and/or a thiazolothiazole unit were developed as n-type semiconductors for OFETs. They showed excellent n-type performances with high electron mobilities. The trifluoromethylphenyl group was found to be very effective in inducing n-type behavior. The thiazolothiazole unit was favorable for forming stacking structures leading to efficient intermolecular pi-pi interactions.

Journal Article↗
PubMed2004

Perfluoropentacene: high-performance p-n junctions and complementary circuits with pentacene.

We report the synthesis and characterization of perfluoropentacene as an n-type semiconductor for organic field-effect transistors (OFETs). Perfluoropentacene is a planar and crystalline material that adopts a herringbone structure as observed for pentacene. OFETs with perfluoropentacene were constructed using top-contact geometry, and an electron mobility of 0.11 cm2 V-1 s-1 was observed. Bipolar OFETs with perfluoropentacene and pentacene function at both negative and positive gate voltages. The improved p-n junctions are probably due to the similar d-spacings of both acenes. Complementary inverter circuits were fabricated, and the transfer characteristics exhibit a sharp inversion of the output signal with a high-voltage gain.

Journal Article↗