Biomedical subjects
Publications and source records attributed to Yung-Jung Hsu.
Various CdS nanostructures, including nanoparticle film, bundles of quasi-aligned and well-aligned nanowires, were fabricated with a non-catalytic and template-free MOCVD process. The well-aligned CdS nanowires exhibit unusually high field emission current densities of 225 mA cm(-2) at the applied electric field of 20 V microm(-1).
A noncatalytic and template-free vapor transport process was developed to make possible simultaneous growth of single-crystalline tin nanowires, nanosquares, nanodisks, and polycrystalline nanoparticles. The formation of such a rich variety of morphologies in a single growth experiment can be attributed to variations in the growth rate among different crystallographic planes when employing the vapor-solid growth mechanism. Structural characterization with high-resolution transmission electron microscopy reveals a preferential growth direction of [100] in Sn nanowires, nanosquares, and nanodisks. Shape-dependent superconducting properties are observed. These four types of Sn nanostructures all show typical diamagnetic behavior in magnetization measurements, with the three anisotropically shaped nanostructures (nanowires, nanosquares, and nanodisks) showing one order of magnitude enhancement in the working magnetic field ranges for superconductivity, compared to bulk Sn and Sn nanoparticles. The magnetic field range is broadest for nanowires, followed by nanodisks, nanosquares, and nanoparticles.
A noncatalytic and template-free vapor transport process has been employed to prepare single-crystalline Sn nanowires with diameters of 10-20 nm. The growth of one-dimensional Sn nanowires follows the mechanism similar to the vapor-solid (V-S) mechanism. Two-dimensional square-shaped nanostructures were also found to form in the region of lower deposition temperatures. The rich morphology may be attributed to the competition in growth rate among different crystallographic planes. Structural characterization with high-resolution transmission electron microscopy showed that the nanowires and nanosquares grew in a preferential direction of [200]. The superconducting transition temperatures for Sn nanowires and Sn nanosquares were about 3.7 K, which was very close to that of bulk beta-Sn. Magnetization measurements showed that the critical magnetic fields for both Sn nanowires and Sn nanosquares increased significantly as compared to that of bulk Sn.
A new approach was developed to prepare coaxial (core-shell) CdS-ZnS nanowires via a one-step metallo-organic chemical vapor deposition (MOCVD) process with co-fed single source precursors of CdS and ZnS. Single source precursors of CdS and ZnS with sufficiently different reactivity were prepared and paired up to form the coaxial heterostructure in a one-step process.
A novel approach was developed to prepare thin films of nanosized ZnS-passivated CdS particles via a metal-organic chemical vapor deposition (MOCVD) process with co-fed single source precursors of CdS and ZnS. Single source precursors of CdS and ZnS with sufficiently different reactivity, as judged from thermogravimetry analysis, were prepared and paired up to form ZnS-passivated CdS, (CdS)ZnS, and CdS-modified ZnS, (ZnS)CdS, particle films in a one-step process. For comparison purposes, sequential layer growth of CdS/ZnS and ZnS/CdS particle films was also conducted, and single compound particle films were prepared. These films were characterized with absorption spectrometry, photoluminescence spectroscopy, scanning electron microscopy, and powder X-ray diffraction spectra. The photoluminescence efficiency of the resulting composite particle film of ZnS-passivated CdS was significantly enhanced as compared to that of the plain CdS film, due to the effective passivation of surface electronic states of CdS by ZnS, a material with a higher conduction band than that of CdS. As for particle films of CdS-modified ZnS, a decay in photoluminescence efficiency was observed. The enhancement or decay in photoluminescence efficiency was much more pronounced for the passivated and modified system than for the sequential layer system, proportional to the interfacial area between the CdS and ZnS phases.
A narrow band photoluminescence (PL) emission peak resulting from CdS-Au solid solution was observed when growing one-dimensional nanostructures of CdS via the vapor-liquid-solid mechanism by using Au as the catalyst. This emission peak was located at 680 nm, a wavelength longer than the near band edge emission of CdS at 520 nm, and was shown not to be caused by the usual trap states of CdS which lead to a broad band emission. Here, the one-dimensional nanostructures of CdS were grown in a simple, low-temperature (360 degrees C) metal-organic chemical vapor deposition process with a single source precursor of CdS. Straight nanowires of diameter 50-70 nm and wormlike nanorods of diameter 100-200 nm were obtained. Both the upper and lower portions of the nanorods/nanowires possessed single crystallinity as judged from the corresponding high-resolution transmission electron microscopy images and selected area electron diffraction data. This work demonstrates the feasibility of adjusting PL emission peaks of optoelectronic semiconductors through alloying with metals.