Structure and visible photoluminescence of porous Si1-xGex.
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Biomedical subjects
von Bardeleben HJ
Publications and source records attributed to von Bardeleben HJ.
Electron-paramagnetic-resonance study of the microscopic structure of the Si(001)-SiO2 interface.
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EPR and ENDOR study of the Pb center in porous silicon.
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Defects in porous p-type Si: An electron-paramagnetic-resonance study.
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Systematic study of light-induced effects in hydrogenated amorphous silicon.
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Coexistence of two deep donor states, DX- and DX0, of the Sn donor in Ga1-xAlxAs.
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Electron-paramagnetic-resonance study of GaAs grown by low-temperature molecular-beam epitaxy.
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Electron-paramagnetic-resonance observation of gallium vacancy in electron-irradiated p-type GaAs.
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Excited states of DX in Ga1-xAlxAs.
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Observation of an additional electronic level of the EL2 defect.
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Electron-paramagnetic-resonance study of the Te donor in Ga0.70Al0.30As.
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Behavior of electron-irradiation-induced defects in GaAs.
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Metastable state of the EL2 defect in GaAs.
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Donors in semiconductors and metastability.
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DX center in Ga1-xAlxAs alloys.
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Electron-paramagnetic-resonance study of the Sn DX center in direct-gap Ga0.69Al0.31As.
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Comment on "Atomic model for the EL2 defect in GaAs"
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EPR observation of a platinum pair complex in Si.
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