@misc{indiciaef1b3d6168162,
  title = {Electronic structure of the Si/GaP(110) interface.},
  author = {DW Niles and H Höchst},
  year = {1989},
  doi = {10.1103/physrevb.39.7769},
  url = {https://pubmed.ncbi.nlm.nih.gov/9947458/},
  note = {Source identifier: 9947458}
}