@misc{indiciaeeb1b7d046122,
  title = {Identifying and quantifying point defects in semiconductors using x-ray-absorption spectroscopy: Si-doped GaAs.},
  author = {S Schuppler and DL Adler and LN Pfeiffer and KW West and EE Chaban and PH Citrin},
  year = {1995},
  doi = {10.1103/physrevb.51.10527},
  url = {https://pubmed.ncbi.nlm.nih.gov/9977747/},
  note = {Source identifier: 9977747}
}