@misc{indiciaeb6971de693a3,
  title = {Defect evolution in Co-implanted Si during annealing at 1000 degreesC studied using variable-energy positrons and Rutherford backscattering.},
  author = {AP Knights and GR Carlow and M Zinke-Allmang and PJ Simpson},
  year = {1996},
  doi = {10.1103/physrevb.54.13955},
  url = {https://pubmed.ncbi.nlm.nih.gov/9985314/},
  note = {Source identifier: 9985314}
}