TY  - RPRT
TI  - Defect evolution in Co-implanted Si during annealing at 1000 degreesC studied using variable-energy positrons and Rutherford backscattering.
AU  - AP Knights
AU  - GR Carlow
AU  - M Zinke-Allmang
AU  - PJ Simpson
PY  - 1996
DO  - 10.1103/physrevb.54.13955
UR  - https://pubmed.ncbi.nlm.nih.gov/9985314/
ID  - 9985314
ER  -