PubMed · 11187023
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D J Brenner, R K Sachs. 2000. Protraction effects in radiation studies: basic biophysics.. https://pubmed.ncbi.nlm.nih.gov/11187023/
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The model of resonance energy transfer (RET) in membrane systems containing donors randomly distributed over two parallel planes separated by fixed distance and acceptors confined to a single plane is presented. Factors determining energy transfer rate are considered with special attention being given to the contribution from orientational heterogeneity of the donor emission and acceptor absorption transition dipoles. Analysis of simulated data suggests that RET in membranes, as compared to intramolecular energy transfer, is substantially less sensitive to the degree of reorientational freedom of chromophores due to averaging over multiple donor-acceptor pairs. The uncertainties in the distance estimation resulting from the unknown mutual orientation of the donor and acceptor are analyzed.
The disjoining pressure of charged parallel interfaces confining an electrolyte solution is to a large extent determined by the screening clouds of the surface charges. We evaluate the pressure in terms of the number density sigma of discrete charges and film thickness d and find, at sigmad(2) approximately 1, a crossover from the well-known law P approximately sigma(2) to a linear behavior P approximately sigma. For the latter case, each surface charge results in strongly inhomogeneous pressure profiles at both interfaces.
We propose a model to interpret the large-bandgap behavior in transport of electrons through an individual DNA molecule where the tunneling electrons are coupled with two-level systems (TLS). The TLS can be regarded as the simplest way to describe vibrations and inelastic scattering in the molecules if the two levels represent the low-lying phonon states. The nonlinear current-voltage curves can be derived by the use of the transfer matrices in an equivalent single-particle multichannel network. At low temperatures, the gap of the conduction band is sensitive to the strength of the coupling between the TLS and the conduction electrons. It is shown that the large-bandgap behavior similar to that of semiconductors stems from the inelastic scattering by the TLS.