PubMed Health⌕ Search

PubMed · 11403445

Solid-phase microextraction method for gas chromatography with mass spectrometric and pulsed flame photometric detection: studies of organoarsenical speciation.

Abstract

The development, optimization, and application of a novel method for arsenic speciation based on capillary gas-liquid chromatography with simultaneous quadrupole ion-trap mass spectrometric (MS) detection and pulsed flame photometric detection (PFPD) is described. The method couples the sensitive arsenic-selectivity of PFPD with the structure elucidation capability of molecular MS detection for the determination of trace levels of unknown organoarsenicals in complex matrices. The conditions that affect the PFPD response in the presence of interfering species were optimized using the sequential Simplex algorithm for three key factors: gate delay (18.3 ms), gate width (9.1 ms), and combustion gas composition (16.6 ml/min H2). Complete discrimination in the PFPD of the arsenic signal from interfering S-, C-, and OH-emitting species that are problematic in existing methods was achieved. Additionally, a revised interpretation of our previously reported mechanism [J. Chromatogr. A 807 (1998) 253] for the dithiol derivatization and subsequent GC-MS determination of dimethylarsinic acid is presented.

Explore related subjects

Keep this discovery

Explore connections, maps & timelines

BibTeXRIS

D R Killelea, J H Aldstadt. 2001-05-18. Solid-phase microextraction method for gas chromatography with mass spectrometric and pulsed flame photometric detection: studies of organoarsenical speciation.. https://doi.org/10.1016/s0021-9673(01)00678-1

Cite the original work for its findings. Save a collection to share your selection of sources.

KEEP EXPLORING

Related citations

Room-temperature broadband emission of an InGaAs/GaAs quantum dots laser.

We report the first demonstration to our knowledge of an ultrabroad emission laser using InGaAs/GaAs quantum dots by cycled monolayer deposition. The device exhibits a lasing wavelength coverage of approximately 40 nm at an approximately 1160 nm center wavelength at room temperature. The broadband signature results from the superposition of quantized lasing states from highly inhomogeneous dots.

Arsenicals↗

High electron mobility InAs nanowire field-effect transistors.

Single-crystal InAs nanowires (NWs) are synthesized using metal-organic chemical vapor deposition (MOCVD) and fabricated into NW field-effect transistors (NWFETs) on a SiO(2)/n(+)-Si substrate with a global n(+)-Si back-gate and sputtered SiO(x)/Au underlap top-gate. For top-gate NWFETs, we have developed a model that allows accurate estimation of characteristic NW parameters, including carrier field-effect mobility and carrier concentration by taking into account series and leakage resistances, interface state capacitance, and top-gate geometry. Both the back-gate and the top-gate NWFETs exhibit room-temperature field-effect mobility as high as 6580 cm(2) V(-1) s(-1), which is the lower-bound value without interface-capacitance correction, and is the highest mobility reported to date in any semiconductor NW.

Arsenicals↗