Ligand-localized electron trapping at sensitized semiconductor interfaces.

Abstract

Nanocrystalline (anatase), mesoporous TiO2 thin films were derivatized with [Ru(bpy)2(deebq)](PF6)2 or [Os(bpy)2(deebq)](PF6)2, where bpy is 2,2'-bipyridine and deebq is 4,4'-diethylester-2,2'-biquinoline. Both compounds bind to the nanocrystalline TiO2 films with typical limiting surface coverages of 7 (+/-2) x 10-8 mol/cm2. Electrochemical measurements show that the first reduction of these compounds (-0.60 V vs SCE) occurs prior to TiO2 reduction. Steady-state illumination in the presence of the sacrificial electron donor triethylamine leads to the appearance of the reduced compound, MII(deebq-)(bpy)2+/TiO2. Neither the photoluminescent excited states or the reduced forms of these compounds inject electrons efficiently into TiO2. Transient absorption measurements after a approximately 10-ns laser pulse, reveal greater than 80% MLCT excited states and a smaller fraction of extremely long-lived charge-separated state intermediates assigned to equal concentrations of MII(deebq-)(bpy)2+/TiO2 and MIII(deebq)(bpy)23+/TiO2. The results are consistent with a mechanism of ultrafast electron injection followed by ligand-localized trapping on a second compound. The quantum yield for formation of the charge-separated states (phiCSS) is excitation wavelength dependent. With 417 nm excitation, phiCSS(417) = 0.14 +/- 0.03, and this decreases with 532.5 nm excitation, phiCSS(532.5) = 0.08 +/- 0.03, and 683 nm excitation for M = Os, phiCSS(683) = 0.05 +/- 0.01. Electron transfer to yield ground-state products, MII(deebq-)(bpy)2+/TiO2 + MIII(deebq)(bpy)23+/TiO2 --> 2 MII(deebq)(bpy)22+/TiO2, occurs with a driving force of 2.05 eV for Ru/TiO2 and 1.64 eV for Os/TiO2. The dynamics of this process were quantified on a millisecond time scale and were found to follow second-order kinetics. The intermediates are sufficiently long-lived that continued pulsed excitation at 10 Hz leads to high concentrations and the formation of transient images on the semiconductor surface that are easily observed by the naked eye.