Voltage refinement by deficit HOLZ line geometry.

Chris J Rossouw; Christian J Maunders

doi:10.1093/jmicro/dfh038

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PubMed · 15582936

Voltage refinement by deficit HOLZ line geometry.

Chris J Rossouw·Christian J Maunders

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Abstract

A method of refining electron beam voltage from deficit line intersections, using a quasi-kinematic scattering approximation, is described and applied to a silicon standard. It is shown that dynamical corrections are necessary for higher-index zone axes, such as 310 and 411, where a single deficit line associated with one dominant Bloch state is visible. This leads to a substantial difference in the refined voltage compared with that obtained from a purely kinematic approximation. Neglect of this dynamical correction term effectively invokes a systematic error that may lead to high precision but poor accuracy in higher-order Laue zone measurements of beam voltage or lattice parameters. Although relatively small, differences in the dynamical correction necessary for these two zones are confirmed experimentally for 100-300 keV electrons.

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Computer Simulation Crystallography Mathematical Computing Microscopy, Electron Molecular Structure Journal Article Research Support, Non-U.S. Gov't

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Chris J Rossouw, Christian J Maunders. 2004. Voltage refinement by deficit HOLZ line geometry.. https://doi.org/10.1093/jmicro%2Fdfh038

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