A single electron transistor on an atomic force microscope probe.

Henrik T A Brenning; Sergey E Kubatkin; Donats Erts; Sergey G Kafanov; Thilo Bauch; Per Delsing

doi:10.1021/nl052526t

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A single electron transistor on an atomic force microscope probe.

Henrik T A Brenning·Sergey E Kubatkin·Donats Erts·Sergey G Kafanov·Thilo Bauch·Per Delsing

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Abstract

We report fabrication as well as proof-of-concept experiments of a noninvasive sensor of weak nanoscale electric fields. The sensor is a single electron transistor (SET) placed at the tip of a noncontact atomic force microscope (AFM). This is a general technology to make any nanometer-sized lithography pattern at edges or tips of a cantilever. The height control of the AFM allows the SET to hover a few nanometers above the substrate, improving both the electric field sensitivity and lateral resolution of the electrometer. Our AFM-SET sensor is prepared by a scalable technology. It means that the probe can be routinely fabricated and replaced, if broken.

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Electrons Microscopy, Atomic Force Transistors, Electronic Journal Article Research Support, Non-U.S. Gov't

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Henrik T A Brenning, Sergey E Kubatkin, Donats Erts, Sergey G Kafanov, Thilo Bauch, Per Delsing. 2006. A single electron transistor on an atomic force microscope probe.. https://doi.org/10.1021/nl052526t

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