Polarization-selective plasmon-enhanced silicon quantum-dot luminescence.

Hans Mertens; Julie S Biteen; Harry A Atwater; Albert Polman

doi:10.1021/nl061494m

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Polarization-selective plasmon-enhanced silicon quantum-dot luminescence.

Hans Mertens·Julie S Biteen·Harry A Atwater·Albert Polman

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Abstract

The photoluminescence intensity of silicon quantum dots is enhanced in a polarization-selective way by coupling to elongated Ag nanoparticles. The observed polarization dependence provides direct proof that the PL enhancement is due to electromagnetic coupling of the silicon quantum-dot emission dipoles with dipolar plasmon modes of the Ag nanoparticles. The polarization selectivity demonstrates the potential of engineered plasmonic nanostructures to optimize and tune the performance of light sources in a way that goes beyond solely enhancing the emission and absorption rates.

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Luminescence Materials Testing Nanoparticles Nanotechnology Particle Size Quantum Dots Sensitivity and Specificity Silicon Silver Surface Plasmon Resonance Surface Properties Journal Article Research Support, Non-U.S. Gov't Research Support, U.S. Gov't, Non-P.H.S.

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Hans Mertens, Julie S Biteen, Harry A Atwater, Albert Polman. 2006. Polarization-selective plasmon-enhanced silicon quantum-dot luminescence.. https://doi.org/10.1021/nl061494m

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