Radiation dosimetry using junction field-effect transistor detectors.

Abstract

The use of junction field effect transistors (JFET) has been studied by connecting them in a bridge circuit. With a suitable back-up circuit, it was possible to measure doses as well as dose-rates. It was possible to alter the sensitivity of the JFET bridge by varying the biasing components of the JFET. Easy temperature compensation was also possible. However, response of the JFET to radiation showed energy dependency similar to that of semiconductor diodes.