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We present a compact confocal readout system for three-dimensional optical memories that uses the thresholding property of a semiconductor laser for feedback light. The system has higher axial resolution than a conventional confocal system with a pinhole. We demonstrate readout results for data recorded in two recording layers with the developed system.
A semiconductor laser capable of operating under both positive and negative bias voltage is reported. Its active region behaves functionally as two different laser materials, emitting different wavelengths, depending on the design, when biased with opposite polarities. This concept was used for the generation of two wavelengths (6.3 and 6.5 micrometers) in the midinfrared region of the spectrum from a single quantum cascade laser structure. The two wavelengths are excited independently of each other and separated in time. This may have considerable impact on various semiconductor laser applications including trace gas analysis in remote sensing applications with differential absorption spectroscopy.
The design of a new-generation semiconductor laser with automated operate is described (wavelength 0.85 to 0.95 mm, power up to 4 W, frequency 0.1 to 3 kHz) and potentialities of its use for laser physio- and reflex therapy of stomatological and general somatic diseases after the authors (patented and certified) methods outlined, including computer-aided laser systems for the differential diagnosis and treatment.
External semiconductor laser treatment was realized in 470 patients with peptic ulcer. The average time of ulcer healing was twice shorter than in control cases. Ulcer epithelialization depended on the severity of the disease, diameter and depth of the ulcer defect. Prophylactic treatment is recommended to reduce the number of recurrences.
A semiconductor laser including two laterally coupled waveguides, in which one of the waveguides includes a partially reflecting surface (an internal mirror) between its facets, is analyzed. The internal mirror inserts longitudinal coupling into the system. The spectrum of the Fabry-Perot modes exhibits modulation in the gain required for lasing threshold, with a periodicity that depends on the longitudinal position of the internal mirror. The combined coupled-cavity effect may explain the observed gain spectrum in GaN lasers.
Chaos synchronization using a continuous chaos control method was studied in two identical chaotic laser systems consisting of semiconductor lasers and optical feedback from an external mirror. Numerical calculations for rate equations indicate that the stability of chaos synchronization depends significantly on the external mirror position. We performed a linear stability analysis for the rate equations. Our results show that the stability of the synchronization is much influenced by the mode interaction between the relaxation oscillation frequency of the semiconductor laser and the external cavity frequency. Due to this interaction, an intensive mode competition between the two frequencies destroys the synchronization, but stable synchronization can be achieved when the mode competition is very weak.
In optically injected semiconductor lasers, intrinsic quantum noise alone, namely, the spontaneous emission and the shot noise, are capable of exciting intensity multipulses from a steady state operation. Noisy lasers exhibit self-pulsations in the locking region of the corresponding deterministic system. The interpulse time statistics are studied in parameter regions near k-homoclinic (Shilnikov) bifurcations where the corresponding deterministic model exhibits single-, double-, and triple-pulse excitability. These statistics differ significantly among each other, and they could be used to characterize regions of different multipulse excitability in a real laser device.
Bulk and quantum well semiconductor lasers by nature display fundamentally different physical characteristics relative to multilevel gas and solid state lasers. In particular, the refractive index is nonzero at peak gain and the peak gain can shift strongly with varying carrier density or temperature. Moreover, a quantum well laser gain may be strongly asymmetric if more than the lowest subband is populated. Rigorously computed and experimentally validated, gain and refractive index spectra are now available for a variety of quantum well structures emitting from the infrared to the visible. Active devices can be designed and grown such that the gain spectrum remains approximately parabolic for carrier density variations typically encountered in above threshold pumped broad area edge-emitting semiconductor lasers. Under this assumption, we derive a robust optical propagation model that tracks the important peak gain shifts and broadening as long as the gain remains approximately parabolic over the relevant energy range in a running laser. We next derive a multimode model where the longitudinal modes are projected out of the total field. The next stage is to derive a mean-field single longitudinal mode model for a wide aperture semiconductor laser. The mean-field model allows for significant cavity losses and widely different facet reflectivities such as occurs with antireflection- and high-reflectivity-coated facets. The single mode mean-field model is further reduced using an asymptotic expansion of the relevant physical fields with respect to a small parameter. The end result is a complex semiconductor Swift-Hohenberg description of a single longitudinal mode wide aperture laser. The latter should provide a useful model for studying scientifically and technologically important lasers such as vertical cavity surface emitting semiconductor lasers.
We report a theoretical dynamical analysis on effect of semiconductor laser phase noise on the achievable linewidth when locked to a Fabry-Pérot cavity fringe using a modulation-demodulation frequency stabilization technique such as the commonly used Pound-Drever-Hall frequency locking scheme. We show that, in the optical domain, the modulation-demodulation operation produces, in the presence of semiconductor laser phase noise, two kinds of excess noise, which could be much above the shot noise limit, namely, conversion noise (PM-to-AM) and intermodulation noise. We show that, in typical stabilization conditions, the ultimate semiconductor laser linewidth reduction can be severely limited by the intermodulation excess noise. The modulation-demodulation operation produces the undesirable nonlinear intermodulation effect through which the phase noise spectral components of the semiconductor laser, in the vicinity of even multiples of the modulation frequency, are downconverted into the bandpass of the frequency control loop. This adds a spurious signal, at the modulation frequency, to the error signal and limits the performance of the locked semiconductor laser. This effect, reported initially in the microwave domain using the quasistatic approximation, can be considerably reduced by a convenient choice of the modulation frequency.
The effect of irradiation with a gallium-aluminum-arsenide semiconductor laser on responses evoked in trigeminal subnucleus caudal neurons by tooth pulp stimulation was investigated electrophysiologically in Wistar rats anesthetized with urethane plus alpha-chloralose. The pulp of lower incisor was electrically stimulated and the evoked action potentials were extracellularly recorded in the ipsilateral caudal neurons. The laser beam was applied on the cervical surface of the stimulated incisor. The rate of firing discharges and the numbers of spikes evoked in the caudal neurons were compared before and after laser irradiation. Laser irradiation suppressed the late discharges in the response of the caudal neurons which were evoked by excitatory inputs from C-fiber afferents, but did not suppress the early discharges evoked by inputs from A delta-fiber afferents. This indicates that low power laser irradiation (semiconductor laser: 830 nm, 350 mW, CW, through the tooth structures, for 120 s) inhibited the excitation of unmyelinated fibers of the pulp without affecting fine myelinated fibers. These results suggest that low power laser irradiation has a suppressive effect on injured tissue by blocking the depolarization of C-fiber afferents.
Bandwidth-enhanced chaos synchronization in strongly injection-locked semiconductor lasers with optical feedback is numerically studied based on laser rate equations. The bandwidth of the chaotic carrier frequency in a semiconductor laser with optical feedback is expanded roughly three times by strong optical injection compared with the bandwidth when there is no optical injection. Using a bandwidth-enhanced semiconductor laser as a chaotic transmitter and receiver, we synchronized transmitter and the receiver lasers in a complete chaos synchronization scheme.
OBJECTIVE: To explore the using and value of semiconductor laser in endoscopic transnasal dacryocystorhinostomy. METHOD: In 8 cases with obstruction of nasolacrimal duct, after being had submucous resection of nasal septum, nasal polypectomy or sinus resection, we used the fiberoptic light probe through the canalis nasolacrimalis to confirmed the location of sacculus lacrimalis and resected the mucosa and bone on lateral wall of nasal cavity that covering the sacculus lacrimalis. RESULT: Six months after operation, the mucous was complete epithelization and ostium without stricture in seven cases. One case was covered with ulo, after reexcised with semiconductor laser and put the silicon through the canalis nasolacrimalis, the ostium without stricture in 6 months. CONCLUSION: Semiconductor laser can obviously reduce bleeding,adhesion and granulation tissue,it is a good, simply and shortcut way for clinic.
We analyze unidirectionally coupled semiconductor lasers in the feedback/injection scheme to determine their synchronization performance. As the mismatch between the two lasers increases, there is a transition from complete synchronization for identical lasers to time lag synchronization which is only partial. This corresponds to a continuous change of the global minimum that becomes a relative minimum of the synchronization error function and vice versa.
For semiconductor lasers subject to a delayed optical feedback, branches of steady states sequentially appear as the feedback rate is increased. But branches of time-periodic solutions are connecting pairs of steady states and provide bridges between stable and unstable modes. All bridges experience a change of stability through a torus bifurcation point. Close to the bifurcation point, the torus remains localized near a specific fixed point in phase space. As the feedback rate increases, the torus envelope suddenly unfolds and its trajectory visits two or more unstable fixed points, anticipating the rich dynamics observed at larger feedback rates.
PURPOSE: This study was conducted to investigate the antimicrobial effect of an 809-nm semiconductor laser on common dental implant surfaces. MATERIALS AND METHODS: Sandblasted and acid-etched (SA), plasma-sprayed (TPS), and hydroxyapatite-coated (HA) titanium disks were incubated with a suspension of S. sanguinis (ATCC 10556) and subsequently irradiated with a gallium-aluminum-arsenide (GaAlAs) laser using a 600-microm optical fiber with a power output of 0.5 to 2.5 W, corresponding to power densities of 176.9 to 884.6 W/cm2. Bacterial reduction was calculated by counting colony-forming units on blood agar plates. Cell numbers were compared to untreated control samples and to samples treated with chlorhexidine digluconate (CHX). Heat development during irradiation of the implants placed in bone blocks was visualized by means of shortwave thermography. RESULTS: In TPS and SA specimens, laser irradiation led to a significant bacterial reduction at all power settings. In an energy-dependent manner, the number of viable bacteria was reduced by 45.0% to 99.4% in TPS specimens and 57.6% to 99.9% in SA specimens. On HA-coated disks, a significant bacterial kill was achieved at 2.0 W (98.2%) and 2.5 W (99.3%) only (t test, P < .05). For specimens treated with CHX, the bacterial counts were reduced by 99.99% in TPS and HA-coated samples and by 99.89% in SA samples. DISCUSSION: The results of the study indicate that the 809-nm semiconductor laser is capable of decontaminating implant surfaces. Surface characteristics determine the necessary power density to achieve a sufficient bactericidal effect. The bactericidal effect, however, was lower than that achieved by a 1-minute treatment with 0.2% CHX. The rapid heat generation during laser irradiation requires special consideration of thermal damage to adjacent tissues. CONCLUSION: No obvious advantage of semiconductor laser treatment over conventional methods of disinfection could be detected in vitro.
We propose and illustrate in the context of the semiconductor laser that, in nonequilibrium fermionic systems with sources and sinks, the family of finite flux stationary solutions of the quantum Boltzmann equation is central and more important then the zero flux Fermi-Dirac spectrum. We present the quantum analog of the finite flux Kolmogorov spectra which are central to understanding nonequilibrium classical systems such as high Reynolds number hydrodynamics and the wave turbulence encountered in water waves, plasmas, and optics. In particular, we show how semiconductor laser efficiency can be improved by maximizing the flux of carriers (electrons and holes) towards the lasing frequencies.
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