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At least 19 recordsLinked to original sources

Semiconductor nanocrystal quantum dots on single crystal semiconductor substrates: high resolution transmission electron microscopy.

We report on high-resolution transmission electron microscope structural studies of InAs colloidal semiconductor nanocrystal quantum dots (NCQDs) on ultrathin GaAs (001) semiconductor single-crystal substrates. We employ a benign method for preparing electron transparent specimens that is suitable for the study of such fragile samples. The image contrast comprises contributions from electron scattering from both the NCs and the GaAs substrate. Long-term electron exposure studies reveal different damage mechanisms operative in the nanocrystals and the substrate.

Arsenicals↗

Numerical study of wavelength-swept semiconductor ring lasers: the role of refractive-index nonlinearities in semiconductor optical amplifiers and implications for biomedical imaging applications.

Recent results have demonstrated unprecedented wavelength-tuning speed and repetition rate performance of semiconductor ring lasers incorporating scanning filters. However, several unique operational characteristics of these lasers have not been adequately explained, and the lack of an accurate model has hindered optimization. We numerically investigated the characteristics of these sources, using a semiconductor optical amplifier (SOA) traveling-wave Langevin model, and found good agreement with experimental measurements. In particular, we explored the role of the SOA refractive-index nonlinearities in determining the intracavity frequency-shift-broadening and the emitted power dependence on scan speed and direction. Our model predicts both continuous-wave and pulse operation and shows a universal relationship between the output power of lasers that have different cavity lengths and the filter peak frequency shift per round trip, therefore revealing the advantage of short cavities for high-speed biomedical imaging.

Amplifiers, Electronic↗

Photoluminescence resulting from semiconductor-metal solid solution observed in one-dimensional semiconductor nanostructures.

A narrow band photoluminescence (PL) emission peak resulting from CdS-Au solid solution was observed when growing one-dimensional nanostructures of CdS via the vapor-liquid-solid mechanism by using Au as the catalyst. This emission peak was located at 680 nm, a wavelength longer than the near band edge emission of CdS at 520 nm, and was shown not to be caused by the usual trap states of CdS which lead to a broad band emission. Here, the one-dimensional nanostructures of CdS were grown in a simple, low-temperature (360 degrees C) metal-organic chemical vapor deposition process with a single source precursor of CdS. Straight nanowires of diameter 50-70 nm and wormlike nanorods of diameter 100-200 nm were obtained. Both the upper and lower portions of the nanorods/nanowires possessed single crystallinity as judged from the corresponding high-resolution transmission electron microscopy images and selected area electron diffraction data. This work demonstrates the feasibility of adjusting PL emission peaks of optoelectronic semiconductors through alloying with metals.

Cadmium Compounds↗

Comparison of azo dye degradation efficiency using UV/single semiconductor and UV/coupled semiconductor systems.

This study examined degradation of azo dyes using photocatalytic oxidation (UV/semiconductor). The model substrates employed in this work were Procion Red MX-5B and Amaranth, while the photocatalysts were TiO2, ZnO, and SnO2. UV-Vis spectrum analysis demonstrated that the band gap energies of TiO2, ZnO, and SnO2 were 3.17, 2.92, and 4.13 eV, respectively. The band gap energy of SnO2 is insufficient to initiate photocatalytic reaction after UV irradiation (365 nm). The reaction rate constants fit a first-order reaction model and the reaction rate constant of Procion Red MX-5B for TiO2+SnO2 (0.31 h-1) is larger than that of TiO2 (0.24 h-1) and SnO2 at pH 10. The difference between the conduction bands of SnO2 and TiO2 enables the former to act as a sink for the photogenerated electrons. Most of the reaction rate constants had higher values at pH 10 than pH 7, and thus the OH attack could be assumed to represent the main reaction in this investigation. The quantities of sulfate and chloride ions released are below stoichiometry during the degradation. Owing to the sulfonate groups of Amaranth exceeding Procion Red MX-5B, Amaranth had larger electrostatic attraction than Procion Red MX-5B with the surface of ZnO, and also had higher adsorption percentage than Procion Red MX-5B on the surface of ZnO. The trend of adsorption is consistent with the reaction rate constant at pH 7, namely Amaranth>Procion Red MX-5B. The sulfate dissociation rate constant of Amaranth in UV/ZnO at pH 7 (0.49 h-1) approaches the overall rate constant (0.53 h-1); therefore, the first step involved in Amaranth can be suggested to the cleavage of the bonds of the C-S in Amaranth, causing sulfate ion formation.

Azo Compounds↗

Gate dielectric chemical structure-organic field-effect transistor performance correlations for electron, hole, and ambipolar organic semiconductors.

This study describes a general approach for probing semiconductor-dielectric interfacial chemistry effects on organic field-effect transistor performance parameters using bilayer gate dielectrics. Organic semiconductors exhibiting p-/n-type or ambipolar majority charge transport are grown on six different bilayer dielectric structures consisting of various spin-coated polymers/HMDS on 300 nm SiO(2)/p(+)-Si, and are characterized by AFM, SEM, and WAXRD, followed by transistor electrical characterization. In the case of air-sensitive (generally high LUMO energy) n-type semiconductors, dielectric surface modifications induce large variations in the corresponding OTFT performance parameters although the film morphologies and microstructures remain similar. In marked contrast, the device performance of air-stable n-type and p-type semiconductors is not significantly affected by the same dielectric surface modifications. Among the bilayer dielectric structures examined, nonpolar polystyrene coatings on SiO(2) having minimal gate leakage and surface roughness significantly enhance the mobilities of overlying air-sensitive n-type semiconductors to as high as approximately 2 cm(2)/(V s) for alpha,omega-diperfluorohexylcarbonylquaterthiophene polystyrene/SiO(2). Electron trapping due to silanol and carbonyl functionalities at the semiconductor-dielectric interface is identified as the principal origin of the mobility sensitivity to the various surface chemistries in the case of n-type semiconductors having high LUMO energies. Thiophene-based n-type semiconductors exhibiting similar film morphologies and microstructures on various bilayer gate dielectrics therefore provide an incisive means to probe TFT performance parameters versus semiconductor-dielectric interface relationships.

Journal Article↗

Where the chips fall: environmental health in the semiconductor industry.

Three recent lawsuits are focusing public attention on the environmental and occupational health effects of the world's largest and fastest growing manufacturing sector-the $150 billion semiconductor industry. The suits allege that exposure to toxic chemicals in semiconductor manufacturing plants led to adverse health effects such as miscarriage and cancer among workers. To manufacture computer components, the semiconductor industry uses large amounts of hazardous chemicals including hydrochloric acid, toxic metals and gases, and volatile solvents. Little is known about the long-term health consequences of exposure to chemicals by semiconductor workers. According to industry critics, the semiconductor industry also adversely impacts the environment, causing groundwater and air pollution and generating toxic waste as a by-product of the semiconductor manufacturing process. In contrast, the U.S. Bureau of Statistics shows the semiconductor industry as having a worker illness rate of about one-third of the average of all manufacturers, and advocates defend the industry, pointing to recent research collaborations and product replacement as proof that semiconductor manufacturers adequately protect both their employees and the environment.

Humans↗