Geometric structure at the Si/GaAs(001) interface: The relationship to AlAs/Si/GaAs band offsets.
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Biomedical subjects
SA Chambers
Publications and source records attributed to SA Chambers.
Structure and band bending at Si/GaAs(001)-(2 x 4) interfaces.
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Surface termination of epitaxial NiAl on GaAs(001) by high-angular-resolution x-ray photoelectron diffraction.
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Elastic strain at pseudomorphic semiconductor heterojunctions studied by x-ray photoelectron diffraction: Ge/Si(001) and Si/Ge(001).
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X-ray-photoelectron-diffraction investigation of strain at the Si/Ge(001) interface.
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Fermi-level movement and atomic geometry at the Al/GaAs(001) interface.
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Epitaxial growth and band bending of n- and p-type Ge on GaAs(001).
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Dopant incorporation, Fermi-level movement, and band offset at the Ge/GaAs(001) interface.
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Formation and structure of Fe/Cu(001) interfaces, sandwiches, and superlattices.
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Incident beam effects in medium-energy backscattered electron diffraction.
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Epitaxy, overlayer growth, and surface segregation for Co/GaAs(110) and Co/GaAs(100)-c(82).
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Medium-energy backscattered electron diffraction as a probe of elastic strain in epitaxial overlayers.
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Growth of metastable fcc Co on Ni(001).
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Silicide formation at the Ti/Si(111) interface: Diffusion parameters and behavior at elevated temperatures.
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Simultaneous epitaxy and substrate out-diffusion at a metal-semiconductor interface: Fe/GaAs(001)-c(8 x 2).
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Incident beam effects in angle-resolved Auger electron spectroscopy.
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High-temperature nucleation and silicide formation at the Co/Si(111)-7 x 7 interface: A structural investigation.
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Direct observation of elastic strain and relaxation at a metal-metal interface by Auger electron diffraction: Cu/Ni(001).
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