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T Schenkel

Publications and source records attributed to T Schenkel.

2 recordsLinked to original sources

Integration of scanning probes and ion beams.

We report the integration of a scanning force microscope with ion beams. The scanning probe images surface structures non-invasively and aligns the ion beam to regions of interest. The ion beam is transported through a hole in the scanning probe tip. Piezoresistive force sensors allow placement of micromachined cantilevers close to the ion beam lens. Scanning probe imaging and alignment is demonstrated in a vacuum chamber coupled to the ion beam line. Dot arrays are formed by ion implantation in resist layers on silicon samples with dot diameters limited by the hole size in the probe tips of a few hundred nm.

Bismuth↗

Surface charge compensation for a highly charged ion emission microscope.

A surface charge compensation electron flood gun has been added to the Lawrence Livermore National Laboratory (LLNL) highly charged ion (HCI) emission microscope. HCI surface interaction results in a significant charge residue being left on the surface of insulators and semiconductors. This residual charge causes undesirable aberrations in the microscope images and a reduction of the time-of-flight (T-O-F) mass resolution when studying the surfaces of insulators and semiconductors. The benefits and problems associated with HCI microscopy and recent results of the electron flood gun-enhanced HCI microscope are discussed.

Ions↗