Surface charge compensation for a highly charged ion emission microscope.

J W McDonald; A V Hamza; M W Newman; J P Holder; D H G Schneider; T Schenkel

doi:10.1016/j.ultramic.2004.06.008

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PubMed · 15450667

Surface charge compensation for a highly charged ion emission microscope.

J W McDonald·A V Hamza·M W Newman·J P Holder·D H G Schneider·T Schenkel

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Abstract

A surface charge compensation electron flood gun has been added to the Lawrence Livermore National Laboratory (LLNL) highly charged ion (HCI) emission microscope. HCI surface interaction results in a significant charge residue being left on the surface of insulators and semiconductors. This residual charge causes undesirable aberrations in the microscope images and a reduction of the time-of-flight (T-O-F) mass resolution when studying the surfaces of insulators and semiconductors. The benefits and problems associated with HCI microscopy and recent results of the electron flood gun-enhanced HCI microscope are discussed.

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Ions Microscopy, Electron Semiconductors Spectrum Analysis Surface Properties Journal Article Research Support, U.S. Gov't, Non-P.H.S.

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J W McDonald, A V Hamza, M W Newman, J P Holder, D H G Schneider, T Schenkel. 2004. Surface charge compensation for a highly charged ion emission microscope.. https://doi.org/10.1016/j.ultramic.2004.06.008

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