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PubMed · 14997266

Characterizing single crystal surfaces using high resolution electron diffraction.

D Thien·F-J Meyer zu Heringdorf·P Kury·M Horn-von Hoegen
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Abstract

Characterization and controlled manipulation of surfaces is a crucial factor in modern processing of the technologically relevant Si(100) surface. Using spot profile analyzing low energy electron diffraction, the morphological changes from a single stepped vicinal Si(100) surface to a single-domain (2x1) reconstructed surface have been investigated in situ during Si deposition. The temperature range for formation of this kinetically-stabilized single-domain surface was found to be 400-500 degrees C. This single-domain surface could be preserved for further characterization and experiments after quenching to room temperature.

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CrystallizationMaterials TestingMicroscopy, Electron, TransmissionSiliconSurface PropertiesJournal ArticleResearch Support, Non-U.S. Gov't

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D Thien, F-J Meyer zu Heringdorf, P Kury, M Horn-von Hoegen. 2004-03-03. Characterizing single crystal surfaces using high resolution electron diffraction.. https://doi.org/10.1007/s00216-004-2547-8

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