Enzyme immunoassay of insulin by semiconductor laser fluorometry.
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Fluorometry↗
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Results for “Lasers, Semiconductor”
Explore indexed PubMed citations for clinical trials, systematic reviews and public health research. Read source abstracts and follow each citation to its original PubMed record.
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Monolithic integration of dual-layer optics into broad-area semiconductor laser diodes.
A broad-area semiconductor laser diode with two monolithically integrated optical elements is presented. A 275-nm period detuned second-order diffraction grating on the p-doped side layer is combined with a refractive lens transferred into the GaAs substrate so that outcoupling and beam-shaping functions are decoupled. The high-power device produces a circular spot and demonstrates the potential of dual optics integration in broad-area semiconductor diodes.
Journal Article↗
[A clinical observation of pericoronitis treatment with pulse semiconductor laser].
In order to valuate the effect of pericoronitis treated with pulse semiconductor laser. As a treatment group, 24 ones drawn ramdomly from 48 cases of pericoronitis were given periodontal radiation, point-radiation therapy and pharmacotherapy as well. While another 24 cases as a contrast group were given pharmacotherapy only. On the 3rd day and the 5th day the degree of pain and restriction of mouth opening of the two groups were graded, contrasted and processed by Ridit statistics. Result, The therapy group gained more notable effect in pain-relieving and mouth-opening-improving than the contrast group. Because of no damage, handy and can be done easily, be definite in curative effect, Pulse semiconductor laser treatment pericoronitis deserves popularizing.
Acupuncture Points↗
Tuning of external-cavity semiconductor lasers with chirped diffraction gratings.
We present a novel scheme of tunable semiconductor laser based on the use of a chirped grating in an external cavity. The chirped grating is fabricated using a simple holographic technique: two Gaussian beams having wavefronts with different radii of curvature are brought to interfere on a photoresist layer. The tuning properties of chirped gratings have been investigated with semiconductor lasers operated with an external cavity. With this type of grating positioned in Littrow configuration, the wavelength selection can be done by translating the grating without any need to rotate it. This cavity configuration provides a tunable output beam with an angle of propagation that is independent of the wavelength. The translation of chirped gratings was shown to tune a visible diode laser and an infrared diode laser over the same spectral band as the conventional tuning scheme where an unchirped grating is rotated.
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Indirect detection of aromatic hydrocarbons by semiconductor laser fluorometry in micellar electrokinetic chromatography.
A semiconductor laser is used as an exciting light source in indirect fluorescence detection of neutral samples separated by micellar electrokinetic chromatography. A surfactant, tetradecyltrimethylammonium chloride, is used to form micelles, which act as a pseudostationary phase in the chromatographic separation. This surfactant has a positive charge, thus preventing adsorption of a visualizing agent, oxazine 750 (which contains a positive charge), to the capillary wall (which is negatively charged). The detection mechanism is based on the exclusion of the fluorophore, which is located in the hydrophilic part of the micelle, by a hydrophilic sample. The fluorescence intensity is reduced when the fluorophore is released into the aqueous solution. Separations of several aromatic compounds are demonstrated, and the parameters affecting the selectivity are discussed.
Chromatography↗
Dynamics of two mutually coupled semiconductor lasers: instantaneous coupling limit.
We consider two semiconductor lasers coupled face to face under the assumption that the delay time of the injection is small. The model under consideration consists of two coupled rate equations, which approximate the coupled Lang-Kobayashi system as the delay becomes small. We perform a detailed study of the synchronized and antisynchronized solutions for the case of identical systems and compare results from two models: with the delay and with instantaneous coupling. The bifurcation analysis of systems with detuning reveals that self-pulsations appear via bifurcations of stationary (i.e., continuous wave) solutions. We discover the connection between stationary solutions in systems with detuning and synchronous (also antisynchronous) solutions of coupled identical systems. We also identify a codimension 2 bifurcation point as an organizing center for the emergence of chaotic behavior.
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Multipulse excitability in a semiconductor laser with optical injection.
An optically injected semiconductor laser can produce excitable multipulses. Homoclinic bifurcation curves confine experimentally accessible regions in parameter space where the laser emits a certain number of pulses after being triggered from its steady state by a single perturbation. This phenomenon is organized by a generic codimension-two homoclinic bifurcation and should also be observable in other systems.
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Correlation dimension signature of wideband chaos synchronization of semiconductor lasers.
Chaos data analysis has been performed on the chaotic output power time series data from a synchronized transmitter-receiver pair of semiconductor lasers. The system uses an asymmetric, bidirectional coupling configuration between the master (transmitter), which is a laser diode with optical feedback, and a stand-alone slave semiconductor laser. The correlation dimension of the chaotic time series has a minimum value of 4, which was obtained from high-bandwidth measurements. The correlation dimensions for both the master and the synchronized slave are identical when the cross-correlation coefficient of the synchronized chaos is above 0.9. These results establish correlation dimension analysis as an effective tool for the determination of the quality of wideband chaos synchronization.
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Comparison of the bifurcation scenarios predicted by the single-mode and multimode semiconductor laser rate equations
We present a detailed comparison of the bifurcation scenarios predicted by single-mode and multimode semiconductor laser rate equation models under large amplitude injection current modulation. The influence of the gain model on the predicted dynamics is investigated. Calculations of the dependence of the time averaged longitudinal mode intensities on modulation frequency are compared with experiments performed on an Al(x)Ga(1-x)As Fabry-Perot semiconductor laser.
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Dynamic analysis of the semiconductor laser as a current-controlled oscillator in the optical phased-lock loop: applications.
A methodology for treating the semiconductor laser as a current-controlled oscillator in an optical phase-lock loop is presented. The formalism is applied to phase demodulation of optical beams, reduction of phase noise by self-homodyning, and phase locking of a semiconductor laser array.
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Multiplicative noise in the longitudinal mode dynamics of a bulk semiconductor laser.
We analyze theoretically and experimentally the influence of current noise on the longitudinal mode hopping dynamics of a bulk semiconductor laser. It is shown that the mean residence times on each mode have different sensitivity to external noise added to the bias current. In particular, an increase of the noise level enhances the residence time on the longitudinal mode that dominates at low current, evidencing the multiplicative nature of the stochastic process. A two-mode rate equation model for a semiconductor laser is able to reproduce the experimental findings. Under a suitable separation of the involved time scales, the model can be reduced to a one-dimensional bistable potential system with a multiplicative stochastic term related to the current noise strength. The reduced model clarifies the influence of the different noise sources on the hopping dynamics.
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Low frequency fluctuations in a multimode semiconductor laser with optical feedback.
We study a multimode semiconductor laser subject to a moderate optical feedback. The steady state is destabilized by either a simple Hopf bifurcation leading to in phase dynamics or by a degenerate Hopf bifurcation leading to antiphase dynamics. The degenerate bifurcation is also a source of multiple coexisting attractors. We show that a simple interpretation of the low frequency fluctuations in the multimode regime is provided by a chaotic itinerancy among the many coexisting unstable attractors produced by the degenerate Hopf bifurcation.
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Anticipation in the synchronization of chaotic semiconductor lasers with optical feedback.
The synchronization of chaotic semiconductor lasers with optical feedback is studied numerically in a one-way coupling configuration, in which a small amount of the intensity of one laser (master laser) is injected coherently into the other (slave laser). A regime of anticipated synchronization is found, in which the intensity of the slave laser is synchronized to the future chaotic intensity of the master laser. Anticipation is robust to small noise and parameter mismatches, but in this case the synchronization is not complete. It is also shown that anticipated synchronization occurs in coupled time-delay systems, when the coupling has a delay that is less than the delay of the systems.
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Measurement of Hurst exponents for semiconductor laser phase dynamics.
The phase dynamics of a semiconductor laser with optical feedback is studied by construction of the Hilbert phase from its experimentally measured intensity time series. The Hurst exponent is evaluated for the phase fluctuations and grows from 0.5 to approximately 0.7 (indicating fractional Brownian motion) as the feedback strength is increased. A comparison with numerical computations based on a delay-differential equation model shows excellent agreement and reveals the relative roles of spontaneous emission noise and deterministic dynamics for different feedback strengths.
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Multi-wavelength mid-infrared micro-spectral imaging using semiconductor lasers.
Infrared (IR, 3-12-microm) microscopic spectral imaging is an important analytical technique. Many current instruments employ thermal IR light sources, which suffer the problem of low brightness and high noise. This paper evaluates the system engineering merit in using semiconductor lasers, which offer orders-of-magnitude-higher power, brightness, and lower noise. A microscopic spectral imaging system using semiconductor lasers (quantum cascade) as illuminators, and focal plane array detectors demonstrated a high signal-to-noise ratio (> 20 dB) at video frame rate for a large illuminated area. The comparative advantages of laser vs. thermal light source are analyzed and demonstrated. Microscopic spectral imaging with fixed-wavelength and tunable lasers of 4.6-, 5.1-, 6-, and 9.3-microm wavelength was applied to a number of representative samples that consist of biological tissues (plant and animal), solid material (a stack of laminated polymers), and liquid chemical (benzene). Transmission spectral images with approximately 30-dB dynamic range were obtained with clear evidence of spectral features for different samples. The potential of more advanced systems with a wide coverage of spectral bands is discussed.
Animals↗
Laser Doppler flow measurements with a semiconductor laser.
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Blood Flow Velocity↗
Nonlinear dynamics of a semiconductor laser with filtered optical feedback and the influence of noise.
We investigate the influence of quantum noise on the highly complex nonlinear dynamics that arise in a single-mode semiconductor laser subject to filtered optical feedback. Our numerical study, which utilizes rate equations that are augmented by Langevin noise terms to account for the spontaneous-recombination noise, shows that for relatively broad filters the noise may lead to qualitatively different dynamics than predicted by a deterministic analysis. In particular, we find that certain attractors that are predicted in the absence of noise may no longer be available when the effects of noise are correctly incorporated. For narrow bandwidth filters we demonstrate optical-injection-like behavior and identify locking of the semiconductor laser to the relaxation oscillation side peaks. In general, the results indicate that shot noise in the laser can influence the dynamics quite substantially.
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115 kHz tuning repetition rate ultrahigh-speed wavelength-swept semiconductor laser.
We demonstrate an ultrahigh-speed wavelength-swept semiconductor laser using a polygon-based wavelength scanning filter. With a polygon rotational speed of 900 revolutions per second, a continuous wavelength tuning rate of 9200 nm/ms and a tuning repetition rate of 115 kHz were achieved. The wavelength tuning range of the laser was 80 nm centered at 1325 nm, and the average polarized output power was 23 mW.
Equipment Design↗